Non-linear absorption of focused femtosecond laser pulses at 1.3μm inside silicon: Independence on doping concentration

Leyder, S.; Grojo, David; Delaporte, Philippe; Marine, W.; Sentís, M.; Utéza, O.

doi:10.1016/j.apsusc.2012.10.174

Cited by 23 publications

(24 citation statements)

References 24 publications

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“…This assumes that only two-photon absorption contributes to nonlinear ionization which is consistent with the absence of avalanche signatures for similar experimental conditions. 16 Using a two-photon absorption coefficient 6,23,33 in the range of 0.5-1.5 cm/GW, we find a maximum free-carrier density N max ¼ ½2:9 À 8:1 Â 10 19 cm À3 which is in remarkable agreement with our previous measurements based on ultrafast imaging of the plasma. 5 Assuming that all the absorbed energy to create the plasma is transferred to the lattice, the material can suffer a corresponding energy density E abs ¼ 2 hxN max in the range of 8.8-16.8 J/cm 3 , which is far below the energy density of % 6 kJ cm À3 required to heat silicon to the melting point and overcome the latent heat.…”

Section: à2supporting

confidence: 80%

“…All tested silicon substrates are 100-orientation, high-resistivity crystals (intrinsic or n-doped substrates with R > 10 X cm) so that all are fully transparent to the laser wavelength and we avoid any avalanche effects from equilibrium carrier concentration. 16 Cross-sectioning of the substrates is performed to observe the damage in the bulk of materials. However, because it would be very challenging to cut a substrate in the middle of a micro-sized region, we decided to apply a conventional scanning procedure to produce extended modifications by translating the sample using a motorized X-Y micropositioning stages at 0.1 mm/s perpendicular to the propagation direction of the laser beam (see inset in Fig.…”

Section: Experimental Setup and Methodsmentioning

confidence: 99%

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Limitations to laser machining of silicon using femtosecond micro-Bessel beams in the infrared

Grojo

Mouskeftaras

Delaporte

et al. 2015

Journal of Applied Physics

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We produce and characterize high-angle femtosecond Bessel beams at 1300-nm wavelength leading to nonlinearly ionized plasma micro-channels in both glass and silicon. With microjoule pulse energy, we demonstrate controlled through-modifications in 150-lm glass substrates. In silicon, strong two-photon absorption leads to larger damages at the front surface but also a clamping of the intensity inside the bulk at a level of %4 Â 10 11 W cm À2 which is below the threshold for volume and rear surface modification. We show that the intensity clamping is associated with a strong degradation of the Bessel-like profile. The observations highlight that the inherent limitation to ultrafast energy deposition inside semiconductors with Gaussian focusing [Mouskeftaras et al., Appl. Phys. Lett. 105, 191103 (2014)] applies also for high-angle Bessel beams. V C 2015 AIP Publishing LLC. [http://dx

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Section: à2supporting

confidence: 80%

Section: Experimental Setup and Methodsmentioning

confidence: 99%

Limitations to laser machining of silicon using femtosecond micro-Bessel beams in the infrared

Grojo

Mouskeftaras

Delaporte

et al. 2015

Journal of Applied Physics

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“…The use of mid-infrared wavelengths is required to develop 3D applications in in narrow gap semiconductors. In previous works, we have shown the non-linear response of Si silicon was independent on the doping concentration at 1.3µm [13]. Here, we have shown the response must be also independent on the wavelength.…”

Section: Discussionmentioning

confidence: 77%

“…It is about 100 times less in Si (~50kW) than in SiO 2 . While our previous diagnostics [5,13] and simulations [14] did not exhibit any clear signature of self-focusing, we work here with typical MW power beams and it is likely non-linear propagation effects play roles in Si. In SiO 2 , we can reach the intensities required for multiphoton-avalanche ionization without exceeding the power threshold for self-focusing (~15MW).…”

Section: Measurements and Discussionmentioning

confidence: 93%

“…By measuring the spectrum of the transmitted light, we checked also there is no signature of self-phase modulation (SPM) in the intensity range that we have tested and for both materials. In previous work, we found that objectives with NA>0.3 lead to strong spherical aberrations that affect the measurements [13]. For this reason, we maintain the focus at a fixed distance just below the sample surface (50 µm) when working with the high NA objective.…”

Section: Probing Ionizationmentioning

confidence: 98%

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On the wavelength dependence of femtosecond laser interactions inside band gap solids

et al. 2013

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Conference on Frontiers in Ultrafast Optics - Biomedical, Scientific, and Industrial Applications XIII, San Francisco, CA, FEB 03-05, 2013International audience3D laser microfabrication inside narrow band gap solids like semiconductors will require the use of long wavelength intense pulses. We perform an experimental study of the multiphoton-avalanche absorption yields and thresholds with tightly focused femtosecond laser beams at wavelengths: 1.3 mu m and 2.2 mu m. For comparisons, we perform the experiments in two very different materials: silicon (semiconductor, similar to 1.1 eV indirect bandgap) and fused silica (dielectric, similar to 9 eV direct bandgap). For both materials, we find only moderate differences while the number of photons required to cross the band gap changes from 2 to 3 in silicon and from 10 to 16 in fused silica

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Room‐Temperature Laser Synthesis in Liquid of Oxide, Metal‐Oxide Core‐Shells, and Doped Oxide Nanoparticles

Amendola

Amans

Ishikawa

et al. 2020

Chemistry A European J

230

186

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Although oxide nanoparticles are ubiquitous in science and technology, a multitude of compositions, phases, structures, and doping levels exist, each one requiring a variety of conditions for their synthesis and modification. Besides, experimental procedures are frequently dominated by high temperatures or pressures and by chemical contaminants or waste. In recent years, laser synthesis of colloids emerged as a versatile approach to access a library of clean oxide nanoparticles relying on only four main strategies running at room temperature and ambient pressure: laser ablation in liquid, laser fragmentation in liquid, laser melting in liquid and laser defect‐engineering in liquid. Here, established laser‐based methodologies are reviewed through the presentation of a panorama of oxide nanoparticles which include pure oxidic phases, as well as unconventional structures like defective or doped oxides, non‐equilibrium compounds, metal‐oxide core–shells and other anisotropic morphologies. So far, these materials showed several useful properties that are discussed with special emphasis on catalytic, biomedical and optical application. Yet, given the endless number of mixed compounds accessible by the laser‐assisted methodologies, there is still a lot of room to expand the library of nano‐crystals and to refine the control over products as well as to improve the understanding of the whole process of nanoparticle formation. To that end, this review aims to identify the perspectives and unique opportunities of laser‐based synthesis and processing of colloids for future studies of oxide nanomaterial‐oriented sciences.

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Non-linear absorption of focused femtosecond laser pulses at 1.3μm inside silicon: Independence on doping concentration

Cited by 23 publications

References 24 publications

Limitations to laser machining of silicon using femtosecond micro-Bessel beams in the infrared

Limitations to laser machining of silicon using femtosecond micro-Bessel beams in the infrared

On the wavelength dependence of femtosecond laser interactions inside band gap solids

Room‐Temperature Laser Synthesis in Liquid of Oxide, Metal‐Oxide Core‐Shells, and Doped Oxide Nanoparticles

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