Non-ionising energy loss of pions in thin silicon samples

Lazanu, I.; Lazanu, S.; Biggeri, U.; Borchi, E.; Bruzzi, M.

doi:10.1016/s0168-9002(96)01251-x

Cited by 12 publications

(7 citation statements)

References 14 publications

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“…A possible one is the concentration of primary radiation induced defects per unit particle fluence (CP D) [13]. It is not proportional to the modifications of material parameters due to the irradiation because of the time evolution of vacancies and interstitials -see the discussion in reference [14]. Due to the fact that it does not exist a theory describing these processes of interaction, phenomenological models are used.…”

Section: Mechanisms Of Degradationmentioning

confidence: 99%

Theoretical calculations of the primary defects induced by pions and protons in SiC

Lazanu¹,

Lazanu²,

Borchi³

et al. 2002

Nuclear Instruments and Methods in Physics Research Section A:

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Section: Mechanisms Of Degradationmentioning

confidence: 99%

Theoretical calculations of the primary defects induced by pions and protons in SiC

Lazanu¹,

Lazanu²,

Borchi³

et al. 2002

Nuclear Instruments and Methods in Physics Research Section A:

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“…The mechanisms of interaction of the incident particle with the semiconductor lattice, accompanied by displacement defect production have been discussed in some papers, see, e.g. references [4,5,6]. The incident particle produces, as a consequence of its interaction with ions of the semiconductor lattice, cascades of displacements.…”

Section: Introductionmentioning

confidence: 99%

“…The first two steps have been treated extensively in previous papers [4,5,6], where the concentration of primary defects has been calculated. In this paper, the third step is discussed extensively and represents a generalisation of the previous results published in references [7,8] including also the carbon contributions to defect kinetics.…”

Section: Introductionmentioning

confidence: 99%

The influence of initial impurities and irradiation conditions on defect production and annealing in silicon for particle detectors

Lazanu

2003

Nuclear Instruments and Methods in Physics Research Section B:

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Silicon detectors in particle physics experiments at the new accelerators or in space missions for physics goals will be exposed to extreme radiation conditions. The principal obstacles to long-term operation in these environments are the changes in detector parameters, consequence of the modifications in material properties after irradiation.The phenomenological model developed in the present paper is able to explain quantitatively, without free parameters, the production of primary defects in silicon after particle irradiation and their evolution toward equilibrium, for a large range of generation rates of primary defects. Vacancy-interstitial annihilation, interstitial migration to sinks, divacancy and vacancy-impurity complex (V P , V O, V2O, CiOi and CiCs) formation are taken into account. The effects of different initial impurity concentrations of phosphorus, oxygen and carbon, as well as of irradiation conditions are systematically studied. The correlation between the rate of defect production, the temperature and the time evolution of defect concentrations is also investigated. PACS:29.40 Pe: Semiconductor detectors 61.80 Az: Theory and models of radiation defects 61.70 At: Defect formation and annealing

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“…In the first step, the incident particle, having kinetic energy in the intermediate up to high energy range, interacts with the semiconductor material. The peculiarities of the interaction mechanisms are explicitly considered for each kinetic energy [1,2].…”

Section: Main Hypothesis Of the Modelmentioning

confidence: 99%

Long-term Damage Induced by Hadrons in Silicon Detectors for Uses at the LHC-accelerator and in Space Missions

Lazanu¹,

Lazanu²

2003

Phys. Scr.

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In the present paper, the phenomenological model developed by the authors in previous papers has been used to evaluate the degradation induced by hadron irradiation at the future accelerator facilities or by cosmic protons in high resistivity silicon detectors. The damage has been analysed at the microscopic (defects production and their evolution toward equilibrium) and at the macroscopic level (changes in the leakage current of the p-n junction). The rates of production of primary defects, as well as their evolution toward equilibrium have been evaluated considering explicitly the type of the projectile particle and its energy. Vacancy-interstitial annihilation, interstitial migration to sink, complex (V P , V O, V 2 O, C i O i and C i C s ) and divacancy formation are taken into account for different initial silicon material. The influence of these defects on the leakage detector current has been calculated in the frame of the Schokley-Read-Hall model. PACS:29: Experimental methods and instrumentation for elementary-particle and nuclear physics 81: Materials science 78: Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter

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Non-ionising energy loss of pions in thin silicon samples

Cited by 12 publications

References 14 publications

Theoretical calculations of the primary defects induced by pions and protons in SiC

Theoretical calculations of the primary defects induced by pions and protons in SiC

The influence of initial impurities and irradiation conditions on defect production and annealing in silicon for particle detectors

Long-term Damage Induced by Hadrons in Silicon Detectors for Uses at the LHC-accelerator and in Space Missions

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