Non-fullerene
acceptors (NFAs) can be simply divided into three
categories: A–D–A, A–DA′D–A, and
A2–A1–D–A1–A2 according to their chemical structures. Benefiting from the
easily modified 1,1-dicyanomethylene-3-indanone end groups, the halogenation
on the first two types of materials has been proved to be very effective
to modulate their optoelectronic properties and improve their photovoltaic
performance. Hence, in this work, we systematically investigate the
effect of halogenation on the classic NFA molecule of BTA3, which has the linear A2–A1–D–A1–A2-type backbone. After fluorination and
chlorination, F-BTA3 and Cl-BTA3 have similar
optical band gaps but lower energy levels than BTA3.
When blending with a linear copolymer PE25 composed of
benzodifuran and chlorinated benzotriazole (BTA) according to “Same-A-Strategy”,
the corresponding V
OC of the halogenated
NFAs gradually decreases (1.13 V for F-BTA3 and 1.09
V for Cl-BTA3), compared with that of the BTA3-based device (V
OC = 1.22 V). This tendency
mainly comes from the lower lowest unoccupied molecular orbital energy
levels due to the strong electron-withdrawing ability of halogen atoms
and the larger nonradiative energy loss. However, the power conversion
efficiencies of the halogenated materials are slightly improved, from
9.08% for PE25: BTA3 to 10.45% for PE25: F-BTA3 and 10.75% for PE25: Cl-BTA, with the nonhalogenated
solvent tetrahydrofuran as the processing solvent. The improved photovoltaic
performance of F-BTA3 and Cl-BTA3 should
come from the higher carrier mobility, weaker bimolecular recombination,
and higher fluorescence quenching rate. This study illustrates that
halogenation on the A1 unit is a promising strategy for
developing novel and effective A2–A1–D–A1–A2-type NFAs.