Non-Equilibrium behavior of dopants during epitaxial silicon deposition using silane

Gupta, Dinesh C.

doi:10.1007/bf02659163

Cited by 5 publications

(2 citation statements)

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“…The inhibition of silane decomposition in the presence of arsine was also observed (3) in an earlier series of investigations by the present author. Moreover, Gupta (15) and Eversteyn and Put (13) have recently observed this effect in conventional atmospheric pressure reactors. The small number [As (solid) /Si (solid) < 10-~] of arsenic atoms incorporated into silicon layersgrown under growth-inhibited conditions in both of these investigations suggests that only a small fraction of the silicon surface is covered with adsorbed arsenic adatoms.…”

Section: Discussionmentioning

confidence: 87%

The Kinetics of Silicon Deposition on Silicon by Pyrolysis of Silane

Farrow¹

1974

J. Electrochem. Soc.

174

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The kinetics of silane pyrolysis on a silicon (111) surface has been investigated mass spectrometrically by molecular beam sampling over the silane pressure range 1×10−5 normalto 4×10−1 Torr and specimen temperature range 20°–1200°C. Silane decomposition was found to occur by the mechanism SiH4 )(normalgas→SiH4 )(normaladsorbed→normalSi+2H2 where both the amount of adsorbed silane and decomposition rate depend linearly on silane pressure. The activation energy for decomposition was 17±2 kcal mole−1 and the surface reaction efficiency (α) was found to obey the equation α=5.45exp)(−17×103/RT At silane pressures normalPs°false〉5×10−3 normalTorr , small quantities of disilane formed by the bimolecular surface reaction SiH4)(normalads+SiH4)(normalads→Si2H6+H2 were detected with an activation energy for production of 56±6 kcal mole−1 .Measurements of silicon growth rate as a function of silane pressure supported the first‐order mechanism for decomposition. The condensation coefficient (σ) of silicon adatoms, determined from measurements of the silicon growth rate as a function of temperature and the surface reaction efficiency, was found to be less than 0.3 over the entire temperature range 700°–1200°C, indicating that the majority of silicon adatoms were desorbed. This behavior was accounted for on the basis of a step flow model for silicon growth and an activation energy for surface diffusion of 36±6 kcal mole−1 derived. Addition of arsine to the silane was found to inhibit silane pyrolysis. The measurements suggest an activation energy of 18±3 kcal mole−1 for desorption of arsenic adsorbed on the silicon (111) surface. Additions of more than 1% diborane to the silane, on the other hand, resulted in a significant increase in silane reaction efficiency.

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Section: Discussionmentioning

confidence: 87%

The Kinetics of Silicon Deposition on Silicon by Pyrolysis of Silane

Farrow¹

1974

J. Electrochem. Soc.

174

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“…This complex underwent two discrete one-electron quasireversible oxi-dations. This is unlike the C=O complex of Fe-porphyrins, in which the oxidation resulted in the dissociation of the Fe-C bond (6,7).…”

Section: Voltammetric Investigation Of a Selenocarbonyl-lron Porphyrinmentioning

confidence: 87%