Non-destructive testing of a high dense small dimension through silicon via (TSV) array structures by using 3D X-ray computed tomography method (CT scan)

Quantitative Evaluation Method for Etch Sidewall Profile of Through-Silicon Vias (TSVs)

“…Although non-destructive testing of a TSV array structure by 3D X-ray computed tomography has been reported [6], the destructive method is still the most commonly used in the characterization and failure analysis of TSV by way of the techniques of focused ion beam (FIB) and SEM. During sample preparation for cross-sectional images, TSVs require more attention than that of line and space patterns because of their cylindrical shape.…”

Investigation of silicon stress around through silicon vias by high efficiency micro-Raman microscopy

“…For silicon, the Raman penetration depth ranges up to 2 μm, again depending on the laser wavelength. Moreover, the Raman technique can be used to measure the near-surface stresses in Si around TSVs even with an oxide layer covering the wafer surface because the laser can penetrate the oxide layer with nearly 95% transparency [4][5][6][7][8][9][10][11][12][13][14][15]. In this paper, we reports our recent progress on the stress measurement by high efficiency micro-Raman microscopy.…”

A Design for Testability of Open Defects at Interconnects in 3D Stacked ICs

“…A test method based on X-ray computed tomography has been proposed in order to detect such defects [5]. Such detection is time consuming and prone to false alarms resulting in a significant yield loss.…”