2017
DOI: 10.1039/c6me00079g
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Non-conventional charge transport in organic semiconductors: magnetoresistance and thermoelectricity

Abstract: Magnetoresistance and thermoelectricity require additional properties of materials beyond their ability to transport charge, namely a large resistive response to a magnetic field, or in the case of thermoelectrics a large Seebeck coefficient combined with low thermal conductivity.

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Cited by 3 publications
(5 citation statements)
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“…Since the response of OMAR devices to a magnetic field originates from hyperfine field ( B hf )-induced spin-selective routes through a spin-mixing effect, the magnetic sensitivity should be directly related to the shape of the magnetoresistance (MR) curves. The OMAR ratio has been defined as , where R (0) is the resistance at magnetic field B = 0 . MR curves of organic OMAR devices should fit well with either a Lorentz function for saturated line shape (where B 0 is the half-width at half-maximum) or with a non-Lorentz empirical law without clear saturation (where B 1 is the half-width at quarter-maximum) .…”
mentioning
confidence: 99%
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“…Since the response of OMAR devices to a magnetic field originates from hyperfine field ( B hf )-induced spin-selective routes through a spin-mixing effect, the magnetic sensitivity should be directly related to the shape of the magnetoresistance (MR) curves. The OMAR ratio has been defined as , where R (0) is the resistance at magnetic field B = 0 . MR curves of organic OMAR devices should fit well with either a Lorentz function for saturated line shape (where B 0 is the half-width at half-maximum) or with a non-Lorentz empirical law without clear saturation (where B 1 is the half-width at quarter-maximum) .…”
mentioning
confidence: 99%
“…, where R(0) is the resistance at magnetic field B = 0. 16 MR curves of organic OMAR devices should fit well with either a Lorentz function…”
mentioning
confidence: 99%
“…Electrostatic modeling of the interface energetics suggests that bipolarons are generally expected to be significant (i.e., >1% of the polaron concentration) for energetically broad interface DOS distributions at contacts in the Fermi level pinning regime. In this context, bipolarons may also be significant at other interfaces that sustain high charge density in a broadened interfacial DOS, such as the channel of organic thin film transistors 19 , 33 , which might be exploited to create devices with new magnetic functionality.…”
Section: Discussionmentioning
confidence: 99%
“…[ 52–56 ] Over the past years, scientists have managed to increase the ZT values of organic thermoelectric materials via molecular design, phonon, and electron transport decoupling, and production of hybrid composites incorporating high thermoelectric particles. [ 57–69 ]…”
Section: Introductionmentioning
confidence: 99%
“…[52][53][54][55][56] Over the past years, scientists have managed to increase the ZT values of organic thermoelectric materials via molecular design, phonon, and electron transport decoupling, and production of hybrid composites incorporating high thermoelectric particles. [57][58][59][60][61][62][63][64][65][66][67][68][69] In this review, the thermoelectric performances of the organic single-component materials, hybrid composites, and novel ionogels developed over the last several years are discussed separately in terms of the respective parameter tuning and pathway optimization. The current state of the art of organic thermoelectric materials is primarily highlighted based on their structure-property relationship.…”
mentioning
confidence: 99%