Non-contact thermal transistor effects modulated by nanoscale mechanical deformation

Chen, Fangqi; Liu, Xiaojie; Tian, Yanpei; Wang, Duanyang; Zheng, Yi

doi:10.1016/j.jqsrt.2020.107414

Cited by 8 publications

(5 citation statements)

References 29 publications

(38 reference statements)

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“…According to the fluctuation electrodynamics and dyadic Green's function, the near-field radiative heat transfer (NFRHT) between two sheets of Bi 2 Se 3 is given by ( Chen et al., 2020 ):

where Θ and ћ are the mean energy of a Planck oscillator and the reduced Planck constant, respectively. The photonic transmission coefficient ξ represents the tunneling probability of thermal photons, which can be written as:

where k ρ , k 0 = ω/c , and

are the surface parallel wavevector, the wavevector in vacuum and the tangential wavevector perpendicular to the x-y plane in vacuum, respectively.…”

Section: Methodsmentioning

confidence: 99%

Near-field radiative heat transfer between topological insulators via surface plasmon polaritons

Liu

et al. 2021

iScience

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“…According to the fluctuation electrodynamics and dyadic Green's function, the near-field radiative heat transfer (NFRHT) between two sheets of Bi 2 Se 3 is given by ( Chen et al., 2020 ):

where k ρ , k 0 = ω/c , and

are the surface parallel wavevector, the wavevector in vacuum and the tangential wavevector perpendicular to the x-y plane in vacuum, respectively.…”

Section: Methodsmentioning

confidence: 99%

Near-field radiative heat transfer between topological insulators via surface plasmon polaritons

Liu

et al. 2021

iScience

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“…The phase-transition materials are also excellent candidates for the fabrication of thermal transistors due to the apparent difference in properties between two phases. Chen et al [111] presented a dynamic-tuning non-contact thermal transistor with grating nanostructures. The gate terminal is comprised of vanadium dioxide (VO 2 ), a phase-transition material, and polydimethylsiloxane (PDMS), a soft material.…”

Section: Ts=constmentioning

confidence: 99%

“…(5) Local-field enhancement effect. The study of Chen et al [111] showed that in the metalinsulator phase transition of VO 2 , the local-field enhancement effect of SPhPs of insulating VO 2 and SPPs of metallic VO 2 amplified heat flow in thermal transistors.…”

Section: Ts=constmentioning

confidence: 99%

A brief review on the recent development of phonon engineering and manipulation at nanoscales

Xie,

Zhu,

Zhang

et al. 2023

Int. J. Extrem. Manuf.

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Phonons are the quantum mechanical descriptions of vibrational modes that manifest themselves in many physical properties of condensed matter systems. As the size of electronic devices continues to decrease below mean free paths of acoustic phonons, the engineering of phonon spectra at the nanoscale becomes an important topic. Phonon manipulation allows for active control and management of heat flow, enabling functions such as regulated heat transport. At the same time, phonon transmission, as a novel signal transmission method, holds great potential to revolutionize modern industry like microelectronics technology, and boasts wide-ranging applications. Unlike fermions such as electrons, polarity regulation is difficult to act on phonons as bosons, making the development of effective phonon modulation methods a daunting task. This work reviews the development of phonon engineering and strategies of phonon manipulation at different scales, reports the latest research progress of nanophononic devices such as thermal rectifiers, thermal transistors, thermal memories, and thermoelectric devices, and analyzes the phonon transport mechanisms involved. Lastly, we survey feasible perspectives and research directions of phonon engineering. Thermoelectric analogies, external field regulation, and acousto-optic co-optimization are expected to become future research hotspots.

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“…Electrical transistors revolutionized society and have formed the backbone of modern computing and power transmission. Thermal researchers have proposed that thermal transistors could be used in precision thermal management 25 , advanced thermal sensing and integrated control 26 , and passive thermal logic/computation in harsh climates with no available electrical power 4,27,28 .Previous researchers have computationally investigated threeterminal thermal transistors using mechanisms based on thermal radiation 25,26,[29][30][31][32][33][34] , nonlinear phonon conduction in nanoscale systems [35][36][37][38][39][40] , nanoscale confined fluids 41,42 , quantum electronic systems [43][44][45][46][47][48][49][50] , and superconducting devices 51,52 . These proposed mechanisms all involve the concept of a negative differential thermal resistance (NDTR) 35,39 ; using the terminology of a FET, NDTR refers to the regime in which increasing the gate temperature increases the heat flow from the source into the transistor at a fixed source temperature and drain temperature.…”

mentioning

confidence: 99%

“…Previous researchers have computationally investigated threeterminal thermal transistors using mechanisms based on thermal radiation 25,26,[29][30][31][32][33][34] , nonlinear phonon conduction in nanoscale systems [35][36][37][38][39][40] , nanoscale confined fluids 41,42 , quantum electronic systems [43][44][45][46][47][48][49][50] , and superconducting devices 51,52 . These proposed mechanisms all involve the concept of a negative differential thermal resistance (NDTR) 35,39 ; using the terminology of a FET, NDTR refers to the regime in which increasing the gate temperature increases the heat flow from the source into the transistor at a fixed source temperature and drain temperature.…”

mentioning

confidence: 99%

A three-terminal magnetic thermal transistor

et al. 2023

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Three-terminal thermal analogies to electrical transistors have been proposed for use in thermal amplification, thermal switching, or thermal logic, but have not yet been demonstrated experimentally. Here, we design and fabricate a three-terminal magnetic thermal transistor in which the gate temperature controls the source-drain heat flow by toggling the source-drain thermal conductance from ON to OFF. The centimeter-scale thermal transistor uses gate-temperature dependent magnetic forces to actuate motion of a thermally conducting shuttle, providing thermal contact between source and drain in the ON state while breaking contact in the OFF state. We measure source-drain thermal switch ratios of 109 ± 44 in high vacuum with gate switching temperatures near 25 °C. Thermal measurements show that small heat flows into the gate can be used to drive larger heat flows from source to drain, and that the switching is reversible over >150 cycles. Proof-of-concept thermal circuit demonstrations show that magnetic thermal transistors can enable passive or active heat flow routing or can be combined to create Boolean thermal logic gates. This work will allow thermal researchers to explore the behavior of nonlinear thermal circuits using three-terminal transistors and will motivate further research developing thermal transistors for advanced thermal control.

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Non-contact thermal transistor effects modulated by nanoscale mechanical deformation

Cited by 8 publications

References 29 publications

Near-field radiative heat transfer between topological insulators via surface plasmon polaritons

Near-field radiative heat transfer between topological insulators via surface plasmon polaritons

A brief review on the recent development of phonon engineering and manipulation at nanoscales

A three-terminal magnetic thermal transistor

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