Non‐Aqueous Routes to Metal Oxide Thin Films by Atomic Layer Deposition

Capacitance-voltage (C V) and capacitance-frequency (C f) measurements are performed on atomic layer deposited TiO 2 thin films with top and bottom Au and Pt electrodes, respectively, over a large temperature and frequency range. A sharp capacitance peak/discontinuity (C V anomalous) is observed in the C V characteristics at various temperatures and voltages. It is demonstrated that this phenomenon is directly associated with oxygen vacancies. The C V peak irreversibility and dissymmetry at the reversal dc voltage are attributed to difference between the Schottky contacts at the metal/TiO 2 interfaces. Dielectric analyses reveal two relaxation processes with degeneration of the activation energy. The low trap level of 0.60 0.65 eV is associated with the first ionized oxygen vacancy at low temperature, while the deep trap level of 1.05 eV is associated to the second ionized oxygen vacancy at high temperature. The DC conductivity of the films exhibits a transition temperature at 200 C, suggesting a transition from a conduction regime governed by ionized oxygen vacancies to one governed by interstitial Ti 3þ ions. Both the C V anomalous and relaxation processes in TiO 2 arise from oxygen vacancies, while the conduction mechanism at high temperature is governed by interstitial titanium ions. V C 2015 AIP Publishing LLC.

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“…The full experimental details can be found in Ref. 18. A top gold electrode of 2 mm in diameter was then deposited on the sample by sputtering.…”

Section: Methodsmentioning

confidence: 99%

Anomalous C-V response correlated to relaxation processes in TiO2 thin film based-metal-insulator-metal capacitor: Effect of titanium and oxygen defects

Marichy

Sylvestre

Pinna

2015

Journal of Applied Physics

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“…19 The growth per cycle ͑GPC͒ observed for hafnia and titania increases with temperature until it reaches a more or less well defined ALD plateau that is generally centered at 200-275 and 150-200°C, respectively. The study concerning the possible mechanism leading to metal oxide formation has already been published elsewhere.…”

Section: A Film Growthmentioning

confidence: 99%

“…[3][4][5] TiO 2 has also attractive electrical properties despite its low band gap and is more commonly used as a dopant due to its high dielectric constant ranging from 40 to 110. [18][19][20][21] This approach is based on the reaction between a metal alkoxide and a carboxylic acid and allows thin film growth at temperatures as low as 50°C under self-limiting conditions. 8 Moreover, it also finds applications in solar cells 9 and even as a bioactive coating.…”

Section: Introductionmentioning

confidence: 99%

“…6 TiO 2 is also known for its other notable physicochemical properties and is therefore used in photocatalytic or optical coatings 7 due to its high refractive index ͓͑580 nm͒ϳ2.6͔. Since the growth mechanism and the obtained high quality films by this method have already been presented, 19,21,22 the present article will mostly focus on the annealing behavior and on the electrical properties of titania and hafnia films. 10 Atomic layer deposition ͑ALD͒ appears to be the most appropriate method for the coating of complex surfaces with high conformality.…”

Section: Introductionmentioning

confidence: 99%

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Effect of annealing and electrical properties of high-κ thin films grown by atomic layer deposition using carboxylic acids as oxygen source

Rauwel

Ducroquet

Rauwel

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inEffects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition J. Vac. Sci. Technol. A 33, 01A116 (2015); 10.1116/1.4900935Physical and electrical characterization of Ce-HfO2 thin films deposited by thermal atomic layer deposition Densification and improved electrical properties of pulse-deposited films via in situ modulated temperature annealing Appl.Titania and hafnia thin films were deposited by atomic layer deposition using metal alkoxides and carboxylic acids as oxygen source. The effect of annealing under nitrogen on the densification of the films and on the resulting electrical properties is presented. The as-deposited and annealed films demonstrate good dielectric permittivity and low leakage current densities due to their purity and amorphous character.

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“…[1] Among them, CVD involves the decomposition of organometallic precursors at high temperature (> 250 8C) and low pressure, but generates unwanted byproducts in the growing film. Conversely, ALD processes are considered as the most promising techniques to deposit thin layers in nanoscale patterns, [2] because it allows formation of various compositions of thin and conformal films. [3] In ALD, the growth of metal oxides is obtained by the alternate introduction of water vapor (which forms surface hydroxy groups on the substrate), and metal precursors (in gas phase) which react on it.…”

Section: Solution Layer Deposition: a Technique For The Growth Of Ultmentioning

confidence: 99%

Solution Layer Deposition: A Technique for the Growth of Ultra‐Pure Manganese Oxides on Silica at Room Temperature

et al. 2016

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With the ever increasing miniaturization in microelectronic devices, new deposition techniques are required to form high‐purity metal oxide layers. Herein, we report a liquid route to specifically produce thin and conformal amorphous manganese oxide layers on silicon substrate, which can be transformed into a manganese silicate layer. The undesired insertion of carbon into the functional layers is avoided through a solution metal–organic chemistry approach named Solution Layer Deposition (SLD). The growth of a pure manganese oxide film by SLD takes place through the decoordination of ligands from a metal–organic complex in mild conditions, and coordination of the resulting metal atoms on a silica surface. The mechanism of this chemical liquid route has been elucidated by solid‐state 29Si MAS NMR, XPS, SIMS, and HRTEM.

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Non‐Aqueous Routes to Metal Oxide Thin Films by Atomic Layer Deposition

Cited by 53 publications

References 32 publications

Anomalous C-V response correlated to relaxation processes in TiO2 thin film based-metal-insulator-metal capacitor: Effect of titanium and oxygen defects

Anomalous C-V response correlated to relaxation processes in TiO2 thin film based-metal-insulator-metal capacitor: Effect of titanium and oxygen defects

Effect of annealing and electrical properties of high-κ thin films grown by atomic layer deposition using carboxylic acids as oxygen source

Solution Layer Deposition: A Technique for the Growth of Ultra‐Pure Manganese Oxides on Silica at Room Temperature

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