Noise modeling of transferred-substrate InP-DHBTs

Kaule, Evelyne; Doerner, Ralf; Weimann, Nils; Rudolph, Matthias

doi:10.1109/comcas.2017.8244768

Cited by 2 publications

(2 citation statements)

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“…For the transferred-substrate DHBT technology used in this work, noise parameters were measured up to 26 GHz in order to investigate the noise properties, especially regarding τ n . It was found that τ n close to the base-collector transit time yields lower minimum NFs toward higher frequencies compared with the approximation ωτ n ≈ 0 which is predicting a steeper slope [23].…”

Section: Noise Modelingmentioning

confidence: 99%

“…In the course of this work, 50-Ω NF (NF 50 ) was measured in the frequency range of 75–105 GHz in order to validate the model's extrapolation capability. Figure 5 shows the measurement together with NF 50 s calculated from the measured noise parameters up to 26 GHz reported in [23] (bullets) compared with simulated values (lines). The device under test was a single-finger transfer-substrate InP DHBTs with an emitter area of 0.8 × 6 µm 2 measured at the same bias points as used in the design of the circuit.…”

Section: Noise Modelingmentioning

confidence: 99%

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Design and modeling of an ultra-wideband low-noise distributed amplifier in InP DHBT technology

Shivan

Kaule

Hossain

et al. 2019

Int. J. Microw. Wireless Technol.

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This paper reports on an ultra-wideband low-noise distributed amplifier (LNDA) in a transferred-substrate InP double heterojunction bipolar transistor (DHBT) technology which exhibits a uniform low-noise characteristic over a large frequency range. To obtain very high bandwidth, a distributed architecture has been chosen with cascode unit gain cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and ft/fmax of ~360/492 GHz, respectively. Due to optimum line-impedance matching, low common-base transistor capacitance, and low collector-current operation, the circuit exhibits a low-noise figure (NF) over a broad frequency range. A 3-dB bandwidth from 40 to 185 GHz is measured, with an NF of 8 dB within the frequency range between 75 and 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single-stage amplifiers with a cascode configuration. Additionally, this work has proposed that the noise sources of the InP DHBTs are largely uncorrelated. As a result, a reliable prediction can be done for the NF of ultra-wideband circuits beyond the frequency range of the measurement equipment.

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Section: Noise Modelingmentioning

confidence: 99%

Section: Noise Modelingmentioning

confidence: 99%