2009
DOI: 10.1109/tns.2008.2012347
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Noise Minimization of MOSFET Input Charge Amplifiers Based on $\Delta\mu$ and $\Delta{\rm N}$$1/f$ Models

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Cited by 38 publications
(28 citation statements)
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“…The flicker noise of MOS transistors may have two different origins [14], [16]. The model assumes that the flicker noise in the drain current results from the fluctuation in the number of charge carriers.…”
Section: Input Transistor Optimizationmentioning
confidence: 99%
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“…The flicker noise of MOS transistors may have two different origins [14], [16]. The model assumes that the flicker noise in the drain current results from the fluctuation in the number of charge carriers.…”
Section: Input Transistor Optimizationmentioning
confidence: 99%
“…The derivation of the optimal sizing of the input transistor that operates in the strong-inversion region is presented in [14]. The total ENC is expressed in terms of three design variables: the Fig.…”
Section: A Input Transistor Biased In Strong Inversionmentioning
confidence: 99%
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