Noise in porous silicon structures in air and in conditions of gas adsorption

Mkhitaryan, Z. H.; Shatveryan, A. A.; Aroutiounian, V. M.; Gasparyan, F. V.

doi:10.3103/s1068337208030079

Cited by 2 publications

(3 citation statements)

References 14 publications

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“…For measurements of the capacitance semitransparent aluminium layers (∼0.1 µm) were applied, with the vacuum deposition technique, on the front-face area of the samples having a prepared PS layers, as was done in [19]. Deposition was performed through a mask at a sliding angle.…”

Section: Fabrication Of Samplesmentioning

confidence: 99%

Determination of basic parameters of porous silicon

Adamyan¹,

Adamian²,

Aroutiounian³

2006

J. Phys. D: Appl. Phys.

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A new simple nondestructive capacitance method is proposed for determination of the basic parameters of porous silicon such as layer thickness, porosity and dielectric permittivity. The method is based on two measurements of the capacitance of a metal/porous silicon/single crystalline silicon/metal (M/PS/c-Si/M) structure, one measurement being performed with empty pores, and the other measurement with pores filled by an organic compound with a high value of dielectric permittivity. A comparison of results obtained by the ball lap and gravimetric techniques before and after anodization with the capacitance data measurements carried out with the same samples prior to their destruction shows sufficiently good agreement.

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Section: Fabrication Of Samplesmentioning

confidence: 99%

Determination of basic parameters of porous silicon

Adamyan¹,

Adamian²,

Aroutiounian³

2006

J. Phys. D: Appl. Phys.

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show abstract

“…Noise spectroscopy and diagnostics are among the powerful and sensitive tools for studies of properties of semiconductors and different-purpose devices, in particular, gas sensors [5][6][7][8]. Phenomenon of low frequency (LF) fluctuations of electric current in semiconductors and semiconductor devices is an object of investigations of many researchers and engineers [9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…Phenomenon of low frequency (LF) fluctuations of electric current in semiconductors and semiconductor devices is an object of investigations of many researchers and engineers [9][10][11][12][13][14]. Studies have shown that behavior and magnitude of LF-noise in devices based on nanosize porous silicon differs essentially from the noise in devices based on crystalline silicon [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Static and noise characteristics of nanocomposite gas sensors

et al. 2014

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Abstract⎯Thin film gas sensors based on nanocomposite In 2 O 3 ⋅Ga 2 O 3 ⋅SnO 2 (70:20:10) have been manufactured by the high-frequency magnetron sputtering method. The technological cycle of sensor fabrication processes is described. Sensitivity of the prepared sensors at the temperature of working body 250°С and low-frequency noises within the 1-300 Hz range were investigated. The response of sensors to vapors of ethanol and acetone was investigated using resistive and noise methods. It is shown that the value of the sensitivity measured by the noise method exceeds the value of sensitivity measured by the resistive method. Sensors show appreciable sensitivity to the ethanol vapors already at working body temperature 150°С. Sensors can be used for the detection of low concentrations of ethanol vapors. The monotonous increase in the sensitivity of these sensors with increase in the ethanol and acetone vapors content allows applying nanosensors also for fast determination of gases concentration in air.

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Noise in porous silicon structures in air and in conditions of gas adsorption

Cited by 2 publications

References 14 publications

Determination of basic parameters of porous silicon

Determination of basic parameters of porous silicon

Static and noise characteristics of nanocomposite gas sensors

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