1983
DOI: 10.1016/0038-1101(83)90100-4
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Noise in near-ballistic n+nn+ and n+pn+ gallium arsenide submicron diodes

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Cited by 21 publications
(3 citation statements)
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“…The mechanism of mobility fluctuation was able to explain 1/f noise in thermo emf 27 and Hall voltage 28 of intrinsic and extrinsic semiconductors. An indirect support for phonon participation in 1/f noise came from the very low noise observed in near ballistic GaAs diodes 29 and short carbon nanotubes in the ballistic regime 30 , which was attributed to the near-absence of phonon scattering. Also, bulk and surface phonon number fluctuations have been invoked as explanation for the 1/f noise found in the light scattering by quartz crystal 31 and current fluctuations in STM 32 , respectively.…”
Section: Introductionmentioning
confidence: 99%
“…The mechanism of mobility fluctuation was able to explain 1/f noise in thermo emf 27 and Hall voltage 28 of intrinsic and extrinsic semiconductors. An indirect support for phonon participation in 1/f noise came from the very low noise observed in near ballistic GaAs diodes 29 and short carbon nanotubes in the ballistic regime 30 , which was attributed to the near-absence of phonon scattering. Also, bulk and surface phonon number fluctuations have been invoked as explanation for the 1/f noise found in the light scattering by quartz crystal 31 and current fluctuations in STM 32 , respectively.…”
Section: Introductionmentioning
confidence: 99%
“…Unfortunately, the data on noise measurements in these structures are scarce. 39 Due to a great progress in noise measurements in quantum ballistic conductors during the last ten years 7-10 ͑also see Ref. 3͒, we believe it would be now possible to measure the noise suppression effects in SCL ballistic conductors.…”
Section: Discussionmentioning
confidence: 99%
“…This is not the case, however, on what concerns the noise properties. The existing experimental data [13,14] are scarce and the theoretical calculations provide only some estimates valid in the space charge limited transport regime based on the theory of vacuum tubes [15] and of n + -i-n + ballistic diodes [16].…”
Section: Introductionmentioning
confidence: 99%