Noise in a Plasma Wave-Based THz Device

Abstract

Using a two-dimensional ensemble Monte Carlo (EMC) method, the noise spectrum of a InGaAs-based nanoFET is studied in detail. Simulation results show that the noise spectrum consists of two maxima at frequencies of about 0.7 THz and 2 THz. The lower-frequency maximum is sensitive to the source-drain voltage, while that of the higher frequency one is not. These achievements are coincident with experimental results. Moreover, based on Dyakonv-Shur’s theory, the emergence of noise maxima is explained as the excitation of 2D plasma waves in the device.