2015
DOI: 10.1063/1.4908252
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Noise characterization of metal-single molecule contacts

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Cited by 23 publications
(26 citation statements)
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“…[28][29][30] More recently, noise measurements were also applied to molecular junctions. [31][32][33][34][35][36][37][38][39] At room temperature, the dominant noise source in a molecular junction originates from the movement of atoms on the metal electrodes which lead to a fluctuation of the molecule-electrode coupling and hence the measured conductance. 36 The resulting conductance noise power spectrum shows a 1/f n frequency dependence, this type of noise is often referred to as flicker noise or 1/f noise.…”
mentioning
confidence: 99%
“…[28][29][30] More recently, noise measurements were also applied to molecular junctions. [31][32][33][34][35][36][37][38][39] At room temperature, the dominant noise source in a molecular junction originates from the movement of atoms on the metal electrodes which lead to a fluctuation of the molecule-electrode coupling and hence the measured conductance. 36 The resulting conductance noise power spectrum shows a 1/f n frequency dependence, this type of noise is often referred to as flicker noise or 1/f noise.…”
mentioning
confidence: 99%
“…In the cases of more stable metal-moleculemetal systems (without bond breakings) it was revealed that RTS noise originates from the current induced reconfigurations of the molecule. 19 On the other hand flicker noise component is important and has to be analyzed. It may have relatively high amplitude and compete with RTS noise component, therefore 1/f noise has to be analyzed in molecule containing junctions and compared with the case of molecule-free junctions.…”
mentioning
confidence: 99%
“…As shown in Figure a, the researchers obtained an accurate GR noise spectrum from at least three different MCBJ chips. [ 45 ] This voltage noise power spectral density was obtained from a lock‐in state junction of 1,4‐benzenedithiol (BDT) molecule and contains a 1/ f component and a 1/ f 2 component. This curve can be fit by the following formula Sv f=Af+B1+f/f02+4knormalBTR where A and B represent the amplitudes of two types of the noise, k B is the Boltzmann constant, T is the ambient temperature, R is the resistance, and f 0 is the characteristic frequency derived from the inflection position of the total noise spectra, which corresponds to the pink arrow in Figure 5a.…”
Section: Progress In the Characterization Of Electronic Noise In Molementioning
confidence: 99%
“…Reproduced with permission. [ 45 ] Copyright 2015, American Institute of Physics. c) The thermal activated conductance on temperature for an Au–BDA–Au molecular junction, ∆ x represents the change of the gap width, τ e and τ c are marked as RTS emission and capture times.…”
Section: Progress In the Characterization Of Electronic Noise In Molementioning
confidence: 99%