Noise behavior of SiGe n-MODFETS

Low-frequency noise in buried-channel SiGe n-MODFETs

“…The bias dependence of S ID is reflected by the corresponding transconductance of the devices. This suggests that the low-frequency noise depends strongly on carrier density and mobility in the channel, as has been demonstrated theoretically by a number of groups, both in SiGe and InP MODFETs [10,[13][14][15]]. Fig.…”

“…Buried-channel devices are known to have excellent low-frequency noise performance because of the reduced surface scattering at the oxide/semiconductor or metal/semiconductor interface [9]. An investigation of low-frequency noise in SiGe n-MODFETs has been performed through the characterization of gate current, drain current noise, and their correlation [10]. The impact of bias and gate geometry on gate current noise was used to obtain physical insight into the contributing noise sources.…”

Low Frequency Noise in Insulated-Gate Strained-Si n-Channel Modulation Doped Field Effect Transistors

“…6) Due to the relative immaturity of the s-Si technology, noise characterization of these devices is limited. The low frequency noise in p-type strained-SiGe MOSFETs has been studied in multiple papers [7][8][9][10][11][12][13][14] and references therein. However, noise studies in n-channel strained-Si modulation doped FETs (MODFETs) have been reported in a few publications only dealing with Schottky gate devices.…”

“…However, noise studies in n-channel strained-Si modulation doped FETs (MODFETs) have been reported in a few publications only dealing with Schottky gate devices. [12][13][14] In the present paper low frequency noise was studied experimentally in insulated gate strained-Si buried n-channel modulation doped FETs (MOSMODFETs) in the linear regime and in saturation at gate voltages from sub-threshold to strong inversion. Results are compared to those for the control Si nchannel MOSFETs and published data for p-strained-SiGe MOSFETs.…”