Noise as a diagnostic and prediction tool in reliability physics

Jevtic, M.M.

doi:10.1016/0026-2714(95)93070-q

Cited by 75 publications

(29 citation statements)

References 79 publications

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“…The solid line is the plot of r.h.s. of (6) for Ceq =180 pF, RS = 11.12 kΩ, RB = 100 kΩ, that were directly measured by the precision RLC meter (E4890A from Agilent), giving an excellent agreement with the experimental data in a wide range of carrier frequencies. Hence, we conclude that the observed 1/f component of 90 V S relates to a phase change of both in-phase and quadrature signal components, caused by impedances in the measurement circuit.…”

Section: Noise Suppressionsupporting

confidence: 54%

Noise Measurements Of Resistors With The Use Of Dual-Phase Virtual Lock-In Technique

Stadler

Kolek

Zawiślak

et al. 2015

Metrology and Measurement Systems

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Measurement of low-frequency noise properties of modern electronic components is a very demanding challenge due to the low magnitude of a noise signal and the limit of a dissipated power. In such a case, an ac technique with a lock-in amplifier or the use of a low-noise transformer as the first stage in the signal path are common approaches. A software dual-phase virtual lock-in (VLI) technique has been developed and tested in low-frequency noise studies of electronic components. VLI means that phase-sensitive detection is processed by a software layer rather than by an expensive hardware lock-in amplifier. The VLI method has been tested in exploration of noise in polymer thick-film resistors. Analysis of the obtained noise spectra of voltage fluctuations confirmed that the 1/f noise caused by resistance fluctuations is the dominant one. The calculated value of the parameter describing the noise intensity of a resistive material, C = 1·10 −21 m 3 , is consistent with that obtained with the use of a dc method. On the other hand, it has been observed that the spectra of (excitation independent) resistance noise contain a 1/f component whose intensity depends on the excitation frequency. The phenomenon has been explained by means of noise suppression by impedances of the measurement circuit, giving an excellent agreement with the experimental data.

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Section: Noise Suppressionsupporting

confidence: 54%

Noise Measurements Of Resistors With The Use Of Dual-Phase Virtual Lock-In Technique

Stadler

Kolek

Zawiślak

et al. 2015

Metrology and Measurement Systems

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“…The values of parameters C int and/or C bulk contribute to noise index of a resistor -an important parameter for its applications and valuable indicator of its reliability, long-term drift and lifetime [35] and efficient tool in failure prediction of electron devices and circuits [36,37,38].…”

Section: Discussionmentioning

confidence: 99%

Noise properties of Pb/Cd-free thick film resistors

Stadler

Kolek

Zawiślak

et al. 2010

J. Phys. D: Appl. Phys.

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Abstract. Low-frequency noise spectroscopy has been used to examine noise properties of Pb/Cd-free RuO 2 -and CaRuO 3 -based thick films screen printed on alumina substrates. Experiments were performed in temperature range 77 -300 K and frequency range 0.5 -5000 Hz with multiterminal devices. The measured noise has been recognized as resistance noise that consists of background 1/f noise and components generated by several thermally activated noise sources of different activation energies. The total noise has been composed of the contributions generated in resistive layer and in resistive/conductive layers interface. These noise sources are non-uniformly distributed in the resistor volume. Noise intensity of newresistive layers has been described by noise parameter, C bulk . Pb/Cd-free layers occurred to be noisier than their Pb-containing counterparts, however the remove of Pb and Cd from resistive composition is hardly responsible for the increase of the noise. In case of RuO 2 layers noise increases most likely due to larger grain size of RuO 2 powder used to prepare resistive pastes. The information about the quality of resistive-to-conductive layers interface occurred to be stored in the values of noise parameter C int . Pb/Cd-free RuO 2 -based resistive pastes form wellbehaved interfaces with various Ag-based conductive pastes. On the contrary, CaRuO 3 -based paste forms bad contacts with AgPd terminations because density of TANSs increases in the interface area.

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“…The noise measurements can be used in connection with: (i) the estimation of the device reliability; (ii) the selection of reliable devices; (iii) the prediction of device failure; (iv) control and screening in order to provide the expectable device quality and reliability during manufacture; (v) the diagnostics of defects and failures [10][11][12].…”

Section: Reliabilitymentioning

confidence: 99%

Ageing of Cadmium Telluride Radiation Detectors and its Diagnostics with Low Frequency Noise

Andreev

Šik²,

Grmela³

et al. 2013

Metrology and Measurement Systems

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Samples of CdTe single crystals which are used as radiation detectors were periodically measured during a long time interval with different values of an applied voltage. The samples were also periodically exposed during long time periods to high temperatures of 390 K and to rapid changes of temperature from 300 K to 390 K. After 1.5 years of measurements we observed ageing of the samples which resulted in deterioration of their transport characteristics. The resistance of the samples increased significantly and current-voltage characteristics were unstable in time. Noise spectroscopy showed that low frequency noise can be used for detection of CdTe sample ageing as its spectral density increases significantly comparing to the 1/f noise of a high quality sample.

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Noise as a diagnostic and prediction tool in reliability physics

Cited by 75 publications

References 79 publications

Noise Measurements Of Resistors With The Use Of Dual-Phase Virtual Lock-In Technique

Noise Measurements Of Resistors With The Use Of Dual-Phase Virtual Lock-In Technique

Noise properties of Pb/Cd-free thick film resistors

Ageing of Cadmium Telluride Radiation Detectors and its Diagnostics with Low Frequency Noise

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