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Weyer, G.

doi:10.1023/a:1012693229011

Cited by 28 publications

(18 citation statements)

References 48 publications

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“…The three spectra in each case show the evolution of the growth of DD 2 over the span of five half-lives, (a) being soon after implantation and (c) being close to the end of five half-lives. was used to study the magnetic properties of ZnO, the beta decay of the mother isotope 57 Mn, for which the average recoil is ∼40 eV 16 resulted in the production of Zn interstitials. In our studies, 73 As decays to 73 Ge via electron capture and 73 Ga decays to 73 Ge via β − emission with average recoil energies of only ∼1 eV and 10 eV, respectively.…”

Section: A Radioactive Decay Recoil and Implantation-induced Defectsmentioning

confidence: 99%

Evidence for As lattice location and Ge bound exciton luminescence in ZnO implanted withAs73andGe73<

et al. 2011

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The results of photoluminescence (PL) measurements performed on high quality single crystal ZnO implanted with radioactive 73 Ga and 73 As, both of which decay to stable 73 Ge, are presented. Identical effects are observed in the two cases, with a sharp line at 3.3225(5) eV found to grow in intensity in accordance with the growth rate of the Ge daughter atom populations. On the strength of the well-established result that Ga occupies Zn sites, we conclude from the identical outcomes for 73 Ga and 73 As implantations that implanted As also preferentially occupies Zn sites. This result supports the findings of others that As preferentially occupies the Zn rather than the O site in ZnO. The thermal quenching energy of the 3.3225(5) eV line is found to be only 2.9(1) meV in contrast to its large spectral shift of 53.4(1) meV with respect to the lowest energy free exciton. The PL is attributed to exciton recombination at neutral Ge double donors on Zn sites involving transitions that leave the donor in an excited state.

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Section: A Radioactive Decay Recoil and Implantation-induced Defectsmentioning

confidence: 99%

Evidence for As lattice location and Ge bound exciton luminescence in ZnO implanted withAs73andGe73<

et al. 2011

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“…The pioneer of this work was Weyer et al [10] Sn nucleus. As the recoil energies are large during this decay (typically >50 eV) the 119 Sb can be displaced onto both Ga and N sites which allows for the measurement of isomer shifts of Sn -acting as a donor or acceptor, respectively-on both Ga and N sites [13].…”

Section: Mössbauer Spectroscopy (Ms)mentioning

confidence: 99%

The solid state physics programme at ISOLDE: recent developments and perspectives

Johnston

Schell

Correia

et al. 2017

J. Phys. G: Nucl. Part. Phys.

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Solid state physics (SSP) research at ISOLDE has been running since the mid-1970s and accounts for about 10%–15% of the overall physics programme. ISOLDE is the world flagship for the on-line production of exotic radioactive isotopes, with high yields, high elemental selectivity and isotopic purity. Consequently, it hosts a panoply of state-of-the-art nuclear techniques which apply nuclear methods to research on life sciences, material science and bio-chemical physics. The ease of detecting radioactivity—<1 ppm concentrations—is one of the features which distinguishes the use of radioisotopes for materials science research. The manner in which nuclear momenta of excited nuclear states interact with their local electronic and magnetic environment, or how charged emitted particles interact with the crystalline lattices allow the determination of the location, its action and the role of the selected impurity element at the nanoscopic state. ISOLDE offers an unrivalled range of available radioactive elements and this is attracting an increasing user community in the field of nuclear SSP research and brings together a community of materials scientists and specialists in nuclear solid state techniques. This article describes the current status of this programme along with recent illustrative results, predicting a bright future for these unique research methods and collaborations.

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“…Radioactive precursor isotopes to the 119 Sn Mössbauer isotope have been employed in numerous studies of dopants and defects in III-V semiconductors [2,4]. In InSb the neutrino recoil effects in the EC-decays of, respectively, 119 Te and 119m Te to the common 119 Sb daughter isotope have been utilized to create/not create point defects, thereby also identifying the recoil-created defect(s) [5].…”

Section: Elementary Point Defects In Iii-v Semiconductorsmentioning

confidence: 99%

“…This will be illustrated here by selected, recent examples, where Mössbauer emission spectroscopy (MES) has been applied with relatively short-lived radioactive precursors to a Mössbauer isotope. These have in all cases been implanted into the matrix; either by in-beam recoil implantation in nuclear reactions at the ISL laboratory of the Hahn-Meitner Institute in Berlin or directly on-line at the radioactive ion beam facility ISOLDE at CERN (see [2,4] for technical details of these techniques). More comprehensive reviews including further hfi techniques, e.g.…”

Section: Introductionmentioning

confidence: 99%

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Defects in semiconductors—results from Mössbauer spectroscopy

Weyer

2007

Hyperfine Interact

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Progress in the development of Mössbauer techniques with ion-implanted, radioactive precursors to a Mössbauer isotope is discussed. Results obtained for elemental group IV semiconductors and their alloys as well as for III-V and II-VI compound semiconductors are presented. Emphasis is put on Mössbauer emission spectroscopy with radioactive probe atoms where the recoil energy in the nuclear decay is sufficient to expel the daughter atoms from a (substitutional) lattice site. The interactions of such (interstitial) atoms have been studied for 119 Sb → 119 Sn in III-V compounds and for 57 Fe in silicon in particular. Finally, preliminary results, contributing to the question of the origin and nature of the magnetism in the Fedoped, dilute magnetic semiconductor ZnO, are given.

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Untitled

Cited by 28 publications

References 48 publications

Evidence for As lattice location and Ge bound exciton luminescence in ZnO implanted withAs73andGe73<

Evidence for As lattice location and Ge bound exciton luminescence in ZnO implanted withAs73andGe73<

The solid state physics programme at ISOLDE: recent developments and perspectives

Defects in semiconductors—results from Mössbauer spectroscopy

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