NITSRI-2D: A Surface Potential Based SPICE Compatible Model for pH-Sensitive FETs Based on 2-D Materials

Nazeer, Tamanna; Ahsan, Sheikh Aamir

doi:10.1109/essderc59256.2023.10268562

Cited by 1 publication

(3 citation statements)

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“…E f is the Fermi level energy, E c is the conduction, E v is the valence-band energy of the 2DM channel, and E redox is the redox potential of the electrolyte. Reproduced with permission from ref . Copyright 2023 IEEE.…”

Section: Model Descriptionmentioning

confidence: 99%

Section: Model Descriptionmentioning

confidence: 99%

“…This paper serves as an extension of our recent research and builds upon the foundation established in our previous work . It introduces the very first explicit SP-based compact model for double-gate 2D-ISFETs (DG-2D-ISFETs), and the proposed model allows for predicting the response of the electrolytes to different 2D materials.…”

Section: Introductionmentioning

confidence: 98%

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Analyzing Few-Layer and Heterostructure pH-Sensitive 2D-Material Field-Effect Transistors Using a Physics-Based SPICE Compact Model

Nazeer,

Aamir Ahsan

2024

ACS Appl. Electron. Mater.

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In this work, we introduce a surface-potential (SP)-based compact model designed for two-dimensional (2D)-material-based pHsensitive field-effect transistors (FETs). To address device electrostatics toward the electrolyte side, we employ Poisson's equation, site-binding theory, and the Gouy−Chapman−Stern approach. Simultaneously, electrostatics in the channel are handled by integrating 2D density of states and Fermi−Dirac statistics. Our model builds upon our previous work, where we extensively demonstrated a Verilog-A implementation of a physics-based 2D-material FET model, which yielded explicit SP expressions achieved through the Lambert-W function and Halley's correction method. Additionally, the model computes the drain current by using the driftdiffusion transport model. The explicit nature of our model renders it suitable for SPICE-circuit simulation. Validation of our model is conducted using experimental data from ion-sensitive field-effect transistors (ISFETs) based on various transition-metal dichalcogenide (TMD) materials. The model is also extended to capture the behavior of heterostructure ISFETs wherein a vertical heterostructure is established between different TMD materials. The results demonstrate a high level of agreement between the experimental data and our model predictions, underscoring the model's accuracy. This model holds promise for practical applications, particularly in the realm of pH sensing using 2D-nanomaterial FETs.

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Section: Model Descriptionmentioning

confidence: 99%

Section: Model Descriptionmentioning

confidence: 99%