Nitrogen-vacancy defects in diamond produced by femtosecond laser nanoablation technique

Кононенко, В. В.; Власов, И. И.; Гололобов, В. М.; Kononenko, T. V.; Semenov, Timur A.; Хомич, А. А.; Shershulin, V. A.; Кривобок, В. С.; Konov, V. I.

doi:10.1063/1.4993751

Cited by 63 publications

(38 citation statements)

References 21 publications

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“…However, SiV centers exhibited fairly high energetic stability once formed, as indicated by the binding energies in Table 2. Therefore, to help increase the quantity of SiV centers, it is important to motivate these vacancies to diffuse towards Si; for this purpose, laser ablation is useful and has also previously been successfully used in the generation of NV centers [50][51][52].…”

Section: H-terminatedmentioning

confidence: 99%

A Theoretical Study of the Energetic Stability and Geometry of Silicon-Vacancy Color Centers in Diamond (001) Surfaces

Pan

Shen

et al. 2019

Applied Sciences

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Single neutral silicon-vacancy (SiV 0 ) color centers under H-, O-, or N-terminated diamond (001) surfaces were investigated using density functional theory. The formation energy calculation indicated that it is generally easier for SiV 0 to be embedded in an O-terminated diamond (001) surface as compared with H-and N-terminated surfaces, which were effected above the fifth C layer. The effects of the surface termination species on inner diamond atoms decay to be negligible below the fifth C layer. The binding energy results indicated that SiV centers exhibited rather high energetic stability once formed. Additionally, it was revealed that these three surface-terminating species had contracting or expanding effects on inner surface atoms. The calculation for density of states showed that the N-terminated diamond (001) surface served as a suitable medium for single SiV 0 to function as a single-photon source.Appl. Sci. 2019, 9, 5471 2 of 15 nanodiamonds (NDs), which fail to meet the key requirements [10] for ideal single-photon sources. In contrast, negatively charged silicon-vacancy (SiV − ) centers exhibit a sharp ZPL at 738 nm (1.681 eV) at room temperature, with a large DW factor of 0.7 [23] and a short luminescence lifetime of 1 to 4 ns [24]. Similar to SiV − , the SiV center in a neutral charge state (SiV 0 ) also possesses a high DW factor (~0.9), with most of its emitted light concentrated into the ZPL at 946 nm (1.31 eV) [25], rendering SiV 0 a promising candidate for serving as single-photon emitters.The SiV 0 has a ground state electron spin of S = 1. Single SiV defects in diamond are composed of a silicon substituting a C atom (Si) and a vacancy (V) in the nearest neighboring C site. Unlike the NV center, where the nitrogen atom is covalently bonded to its three nearest C atoms, and thus exhibiting C 3V structural symmetry, the SiV center theoretically forms a split-vacancy structure (i.e., a silicon atom located at a bond-center site) in bulk diamond (Figure 1), thus, exhibiting D 3d symmetry.Appl. Sci. 2020, 10, x FOR PEER REVIEW 2 of 15 fluorescence lifetime of up to ~24 ns [20][21][22] in nanodiamonds (NDs), which fail to meet the key requirements [10] for ideal single-photon sources. In contrast, negatively charged silicon-vacancy (SiV − ) centers exhibit a sharp ZPL at 738 nm (1.681 eV) at room temperature, with a large DW factor of 0.7 [23] and a short luminescence lifetime of 1 to 4 ns [24]. Similar to SiV − , the SiV center in a neutral charge state (SiV 0 ) also possesses a high DW factor (~0.9), with most of its emitted light concentrated into the ZPL at 946 nm (1.31 eV) [25], rendering SiV 0 a promising candidate for serving as single-photon emitters.The SiV 0 has a ground state electron spin of S = 1. Single SiV defects in diamond are composed of a silicon substituting a C atom (Si) and a vacancy (V) in the nearest neighboring C site. Unlike the NV center, where the nitrogen atom is covalently bonded to its three nearest C atoms, and thus exhibiting 3 structural symmetry, the SiV center th...

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Section: H-terminatedmentioning

confidence: 99%

A Theoretical Study of the Energetic Stability and Geometry of Silicon-Vacancy Color Centers in Diamond (001) Surfaces

Pan

Shen

et al. 2019

Applied Sciences

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“…By these methods, highly pure or precisely positioned NV − centers could be obtained. In recent years, femtosecond laser technique is exploited as a newly promising tool to conveniently produce single emitters in diamond [16][17][18][19][20][21][22]. The femtosecond laser is used to write vacancies through high-speed electron beam in air filament resulted by highintensity laser pulses [16] or multi-photon ionization [17,18].…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, femtosecond laser technique is exploited as a newly promising tool to conveniently produce single emitters in diamond [16][17][18][19][20][21][22]. The femtosecond laser is used to write vacancies through high-speed electron beam in air filament resulted by highintensity laser pulses [16] or multi-photon ionization [17,18]. Vacancies move to native nitrogen impurities in diamond under thermal annealing [16,18,[20][21][22] or driving of laser pulses [17,19] to form single or ensemble NV − centers.…”

Section: Introductionmentioning

confidence: 99%

“…The femtosecond laser is used to write vacancies through high-speed electron beam in air filament resulted by highintensity laser pulses [16] or multi-photon ionization [17,18]. Vacancies move to native nitrogen impurities in diamond under thermal annealing [16,18,[20][21][22] or driving of laser pulses [17,19] to form single or ensemble NV − centers. Especially, combined with aberration correction, femtosecond laser could write high-quality NV − centers effectively at desire positions [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

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Efficient generation of nitrogen vacancy centers by laser writing close to the diamond surface with a layer of silicon nanoballs

Rong

et al. 2020

New J. Phys.

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We proposed a method to effectively fabricate negatively charged nitrogen vacancy (NV − ) centers close to the diamond surface by applying femtosecond laser writing technique. With a thick layer of silicon (Si) nanoballs coated, diamond surface was irradiated by high-fluence femtosecond laser pulses. A large number of NV − centers were created around the laser ablation crater area without thermal annealing. The distribution of the NV − centers was expanded to about 50 μm away from the crater center. To demonstrate the function of Si nanoballs, we performed the exactly same laser illumination process on the bare region of the sample surface. In this case, only a few NV − centers were generated around ablation crater. At distance of 32 μm away from crater centers, the NV − density for the case with nanoballs was up to 15.5 times higher compared to the case without nanoballs. Furthermore, we also investigated the influence of laser fluence and pulse number on the NV − density for the case with Si-nanoball layer. Finally, the formation mechanism of NV − centers and the role of Si nanoballs were explained via Coulomb explosion model. The method is demonstrated to be a promising approach to efficiently and rapidly fabricate NV − centers close to the surface of the diamond, which are significant in quantum sensing. Furthermore, the results provide deep insights into complex light-matter interactions.

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“…In addition to the particle energy, another tunable parameter is the irradiation dose, which determines the density of vacancies generated in the sample. (82)(83)(84) Alternatively, a recently proposed method is to use femtosecond laser illumination (21,(85)(86)(87)(88), where the ultra-short intense pulses propagating in air induce ionization of molecules like O 2 and N 2 , generating free electrons that are accelerated by the subsequent pulses, producing a beam of electrons that collide with some atoms of carbon at the diamond surface, taking them out of the crystal lattice, thus generating the vacancies. These vacancies can move during annealing (at high temperatures), therefore, creating the possibility of binding to some nitrogen impurity in the crystal, resulting in the NV center.…”

Section: Introductionmentioning

confidence: 99%

Diamond studies for applications in quantum technologies

Segura¹

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To my grandparents Aniceto and Clara, and to loving memory of my grandparents Marcelino and Teresa this humble work is a sign of my love to you. First, I would like thank my advisor Prof. Dr. Sérgio Muniz, for his support from day one to this project and my scientific career. His encouragement always gave me the confidence and energy to finish this project. He also allowed me a lot of flexibility and freedom so that I can become an independent researcher. I am thankful for his kindness, patience, friendship, and support throughout these years. I wish to thank Prof. Dr. Francisco Guimarães for the help with analysis the photoluminescence of the NV center and sharing his knowledge on using the confocal microscope. The discussions were of extreme relevance.

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Nitrogen-vacancy defects in diamond produced by femtosecond laser nanoablation technique

Cited by 63 publications

References 21 publications

A Theoretical Study of the Energetic Stability and Geometry of Silicon-Vacancy Color Centers in Diamond (001) Surfaces

A Theoretical Study of the Energetic Stability and Geometry of Silicon-Vacancy Color Centers in Diamond (001) Surfaces

Efficient generation of nitrogen vacancy centers by laser writing close to the diamond surface with a layer of silicon nanoballs

Diamond studies for applications in quantum technologies

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