NITROGEN-RICH TITANIUM NITRIDE SERVING as Pt-Al DIFFUSION BARRIER FOR FeRAM APPLICATION

Abstract

Nitrogen-rich titanium nitride thin films are prepared by reactive sputtering using a Ti target. Distinctively, there is only N 2 introduced in the reaction chamber. The obtained thin films show (111) and (200) peaks of titanium nitride, with a titanium to nitrogen ratio of 1:1.8. When applied into Pt-Al interface, such a nitrogen-rich titanium nitride layer has prevented the diffusion of Al into Pt during 450 • C forming gas annealing. The contact resistance of Al/TiN x /Pt multi-structure is low enough for integrated circuit applications. While the fabrication technique of nitrogen-rich titanium nitride is simple, it still serves as a good diffusion barrier.

Preparation and characterization of nanostructured titanium nitride thin films at room temperature

“…7 shows the curve of R vs. T of the nanostructured TiN thin films. The high electrical conductivity of nanostructured TiN thin film makes them suitable for applications in the semiconductor industry as diffusion barriers and interconnectors in ultra-large-scale integrated circuits and it is also suitable for thin film resistor in monolithic microwave integrated circuits [21,22]. The resistivity decreases exponentially with respect to temperature tending to have a metallic behavior.…”

Interdiffusion and oxidation behaviour of Pt/Ru modified Ni–30Al–0.3Dy coating on Ni3Al-based superalloy

“…During the past years, many efforts have been devoted to researches on diffusion barriers, including ceramic and metallic ones. Ceramic barriers such as Al 2 O 3 , CrN, TiN, and Al–O–N [12-15] demonstrate excellent performance in prohibiting the interdiffusion and have good stability at elevated temperatures. However, thermal stresses originated from the different coefficients of thermal expansion (CTE) of the ceramic layer and the metallic substrate, which generate the initiation and propagation of microcracks and converge at the coating/substrate interface eventually.…”