Nitrogen-plasma treatment of parallel-aligned SnO2-nanowire field-effect transistors

Epitaxial highly ordered Sb:SnO2nanowires grown by the vapor liquid solid mechanism on m-, r- and a-Al2O3

“…Others like Mazeina et al 28 have grown vertical, un-doped SnO 2 NWs via the VLS mechanism on c-Al 2 O 3 at 900 °C with limited ordering and uniformity. Lateral, but un-doped SnO 2 NWs have also been obtained by Kim et al 29 and Choi et al 30 while more recently Wang et al 31 investigated lateral SnO 2 NWs that were aligned on the surface of m-Al 2 O 3 . All of these studies on epitaxial, ordered un-doped SnO 2 NWs 25–30 focused primarily on their growth and structural properties.…”