“…Others like Mazeina et al 28 have grown vertical, un-doped SnO 2 NWs via the VLS mechanism on c-Al 2 O 3 at 900 °C with limited ordering and uniformity. Lateral, but un-doped SnO 2 NWs have also been obtained by Kim et al 29 and Choi et al 30 while more recently Wang et al 31 investigated lateral SnO 2 NWs that were aligned on the surface of m-Al 2 O 3 . All of these studies on epitaxial, ordered un-doped SnO 2 NWs 25–30 focused primarily on their growth and structural properties.…”
Epitaxial, highly ordered Sb:SnO2 nanowires were grown by the vapor–liquid–solid mechanism on m-, r- and a-Al2O3 between 700 °C and 1000 °C using metallic Sn and Sb with a mass ratio of Sn/Sb = 0.15 ± 0.05 under a flow of Ar and O2 at 1 ± 0.5 mbar.
“…Others like Mazeina et al 28 have grown vertical, un-doped SnO 2 NWs via the VLS mechanism on c-Al 2 O 3 at 900 °C with limited ordering and uniformity. Lateral, but un-doped SnO 2 NWs have also been obtained by Kim et al 29 and Choi et al 30 while more recently Wang et al 31 investigated lateral SnO 2 NWs that were aligned on the surface of m-Al 2 O 3 . All of these studies on epitaxial, ordered un-doped SnO 2 NWs 25–30 focused primarily on their growth and structural properties.…”
Epitaxial, highly ordered Sb:SnO2 nanowires were grown by the vapor–liquid–solid mechanism on m-, r- and a-Al2O3 between 700 °C and 1000 °C using metallic Sn and Sb with a mass ratio of Sn/Sb = 0.15 ± 0.05 under a flow of Ar and O2 at 1 ± 0.5 mbar.
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