Nitrogen Plasma Doping of Single-Crystal ZnTe and CdZnTe on Si by MBE

Kodama, R. H.; Seldrum, Thomas; Wang, Xiaojin; Park, J. H.; Colegrove, Eric; Zheng, Xin; Dhere, R. G.; Sivananthan, S.

doi:10.1007/s11664-013-2810-x

Cited by 3 publications

(1 citation statement)

References 13 publications

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“…Possible techniques used for depositing graded bandgap CdZnTe layers are sputtering (Yilmaz et al 2011;Banerjee and Ghosh 2013), close-spaced sublimation (CSS) (Gao et al 2012;Huang et al 2012), and molecular beam epitaxy (MBE) (Kodama et al 2013). High quality polycrystalline CdZnTe films have been prepared by aluminum induced crystallization (AIC) and radio frequency (R.F.)…”

Section: Introductionmentioning

confidence: 99%

Efficiency improvement of CdZnTe solar cell by modification of interface layer

Rezaie

Kosarian

2015

Opt Quant Electron

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Solar conversion efficiency of graded Cd 1-x Zn x Te solar cells is investigated numerically in this work. It is found that the efficiency can be improved if a p-Cd 0.6 Zn 0.4 Te layer is added to the basic n-ZnO/n-CdS/p-CdTe structure. On the other hand, there is a sharp conduction band offset at the interface of the CdTe and p-Cd 0.6 Zn 0.4 Te layer that affects the cell performance. At the next step, in order to remove the discontinuity at the conduction band between p-CdTe and p-Cd 0.6 Zn 0.4 Te, we have replaced the Cd 1-x Zn x Te with a graded region where the Cd 1-x Zn x Te layer is divided into several individual thinner layers. As a result, the electron (minority carrier) collection at the hetero-interface improves, duo to the establishment of an extra electric field across the graded region, leading to an increase in the solar conversion efficiency. The number of layers and doping concentration of the graded region plays an important role in the performance of the cell. Finally, it had been found that the ZnO/CdS/CdTe/Cd 1-x Zn x Te/p-Cd 0.6 Zn 0.4 Te structure in which the Cd 1-x Zn x Te region consists of 25 thin layers with 10 18 cm -3 doping concentration will have an efficiency &1 % higher than that of the ungraded ZnO/CdS/CdTe structure.

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Section: Introductionmentioning

confidence: 99%

Efficiency improvement of CdZnTe solar cell by modification of interface layer

Rezaie

Kosarian

2015

Opt Quant Electron

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Exploring epitaxial growth of ZnTe thin films on Si substrates

Liu

2022

Vacuum

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Improved growth quality of epitaxial ZnTe thin films on Si (111) wafer with ZnSe buffer layer

Zhu

Qimin

et al. 2021

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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To achieve high-quality and low-cost ZnTe epitaxial films, a low-temperature (LT, 200 °C) ZnSe buffer layer with a thickness of 5 nm was grown on Si (111) wafers prior to the epitaxy of ZnTe layers by molecular beam epitaxy. Reflection high-energy electron diffraction patterns reveal that ZnTe epilayers grown at 335 °C with a thickness of 100 nm on the LT-ZnSe buffer layer present a completely two-dimensional growth mode. Film surfaces present smooth and flat morphology with the lowest surface roughness of ∼2.2 nm at a Te/Zn beam equivalent pressure ratio of 1.6. X-ray diffraction θ-2θ scanning indicates that the out-of-plane structure of ZnTe films is highly preferred with the (111) growth orientation of ZnSe/Si. X-ray diffraction φ scanning further confirms that the in-plane structure of ZnTe epilayer is also a single-crystal orientation growth. Thus, high-quality ZnTe (111) single-crystal epilayer with the lowest full-width at half-maximum of ∼200 arc sec and the smallest dislocation density of ∼1.12 × 108 cm−2 was grown on Si (111) wafers. In addition, the ZnSe buffer layer could alleviate the residual stress effectively for the heteroepitaxy of Si wafers. The most balanced residual stress for ZnTe/ZnSe/Si with σx of ∼96.5 MPa and σy of ∼94.2 MPa was obtained, which is essential for achieving high-performance and good mechanical properties of ZnTe-based devices.

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Nitrogen Plasma Doping of Single-Crystal ZnTe and CdZnTe on Si by MBE

Cited by 3 publications

References 13 publications

Efficiency improvement of CdZnTe solar cell by modification of interface layer

Efficiency improvement of CdZnTe solar cell by modification of interface layer

Exploring epitaxial growth of ZnTe thin films on Si substrates

Improved growth quality of epitaxial ZnTe thin films on Si (111) wafer with ZnSe buffer layer

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