Nitrogen effect on spin-coated ZnO-based p–n homojunctions: structural, optical and electrical characteristics

Alarcón, Raúl Iván Sánchez; Rodríguez-Cantó, Pedro J.; Abargues, Rafael; Martínez‐Pastor, Juan P.; Aguilar-Frutis, M.; Alarcón-Flores, G.; Cármona-Téllez, S.; Falcony, C.

doi:10.1007/s10854-018-9386-4

Cited by 4 publications

(2 citation statements)

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“…Additionally, experimental publications have been reported on the manufacture of p-type ZnO:Ag,N thin films with good electrical properties obtained by the ultrasonic pyrolytic spray technique [17][18][19][20]. Similarly, there are new reports using the technique of deposition by assisted ion implantation [21], the sol-gel and spin coating methods [22,23] and sputtering method [24]. At the same time, theoretical investigations suggest that Ag and N are the two best candidates for the production of p-type ZnO, taking into account the effects of deformation and substitution energy levels of Ag-Zn and N-O [25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Long Electrical Stability on Dual Acceptor P-Type ZnO:Ag,N Thin Films

Avelar Muñoz,

Gómez Rosales,

Ortiz Hernández

et al. 2024

Preprint

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p-type Ag-N dual acceptor doped ZnO thin films with long electrical stability were deposited by DC magnetron reactive co-sputtering technique. After deposition, the films were annealed at 400 °C for one hour in a nitrogen-controlled atmosphere. The deposited films were amorphous. However, after annealing they crystallize in the typical hexagonal wurtzite structure of ZnO. The Ag-N dual acceptors were incorporated substitutionally in the structure of zinc oxide and achieving that the three samples presented the p-type conductivity in the ZnO. Initial electrical properties showed a low resistivity of from 1 to10^{−3} Ω.cm, Hall mobility of tens cm2/V.s and a hole concentration from 10^{17} to 10^{19} cm^{−3}. The electrical stability analysis reveals that the p-type conductivity of the ZnO:Ag,N films is very stable and does not revert to n-type, even after 36 months of aging. These results reveal the feasibility of using these films for applications in short-wavelength or transparent optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Long Electrical Stability on Dual Acceptor P-Type ZnO:Ag,N Thin Films

Avelar Muñoz,

Gómez Rosales,

Ortiz Hernández

et al. 2024

Preprint

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

Long Electrical Stability on Dual Acceptor p-Type ZnO:Ag,N Thin Films

Avelar-Muñoz,

Gómez-Rosales,

Ortiz-Hernández

et al. 2024

Micromachines

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p-type Ag-N dual acceptor doped ZnO thin films with long electrical stability were deposited by DC magnetron reactive co-sputtering technique. After deposition, the films were annealed at 400 °C for one hour in a nitrogen-controlled atmosphere. The deposited films were amorphous. However, after annealing, they crystallize in the typical hexagonal wurtzite structure of ZnO. The Ag-N dual acceptors were incorporated substitutionally in the structure of zinc oxide, and achieving that; the three samples presented the p-type conductivity in the ZnO. Initial electrical properties showed a low resistivity of from 1 to 10−3 Ω·cm, Hall mobility of tens cm2/V·s, and a hole concentration from 1017 to 1019 cm−3. The electrical stability analysis reveals that the p-type conductivity of the ZnO:Ag,N films is very stable and does not revert to n-type, even after 36 months of aging. These results reveal the feasibility of using these films for applications in short-wavelength or transparent optoelectronic devices.

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Interface modification of MoS2/ZnO heterojunction for controllable electron flow and fabrication of high-performance UV photodetectors with fast response/recovery speed

Kim,

Leem

2023

Optik

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Nitrogen effect on spin-coated ZnO-based p–n homojunctions: structural, optical and electrical characteristics

Cited by 4 publications

References 61 publications

Long Electrical Stability on Dual Acceptor P-Type ZnO:Ag,N Thin Films

Long Electrical Stability on Dual Acceptor P-Type ZnO:Ag,N Thin Films

Long Electrical Stability on Dual Acceptor p-Type ZnO:Ag,N Thin Films

Interface modification of MoS2/ZnO heterojunction for controllable electron flow and fabrication of high-performance UV photodetectors with fast response/recovery speed

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