Nitrogen doping of tetrahedral amorphous carbon

Robertson, John; Davis, C. A.

doi:10.1016/0925-9635(94)05265-4

Cited by 236 publications

(111 citation statements)

References 23 publications

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“…The films were grown on the earthed electrode using CH 4 and He as feed gases onto high resistivity Si ͑100͒ ͑10-100 ⍀ cm͒. Deposition on the earthed electrode results in a low negative self bias of ͑Ͻ20 V͒ and results in polymeric a-C:H films with a high optical gap ͑2.6 eV͒.…”

Section: Methodsmentioning

confidence: 99%

Effects of ion implantation on electron centers in hydrogenated amorphous carbon films

Konchits

Valakh

Shanina

et al. 2003

Journal of Applied Physics

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Electron spin resonance ͑ESR͒ and Raman spectra measurements are carried out on a-C:H and a-C:H:N films both as grown and implanted with W and Ni ions with doses ranged from 0.5 ϫ10 15 to 1.2ϫ10 16 cm Ϫ2 . The as-grown films have small concentration of paramagnetic centers with a spin density N s of 10 17 cm Ϫ3 . Upon implantation a significant increase in N s of (0.5-22) ϫ1019 cm Ϫ3 centers with g (Si) ϭ2.0055 and g (C) ϭ2.0025 was observed. These defects are ascribed to dangling bonds in the silicon substrate and in the carbon film, respectively. The correlation between variation of N s value with implantation dose and behavior of D and G band position and their intensity ratio in the visible Raman spectra is observed. The effects are attributed to changes in the sp 2 -sp 3 systems and hydrogen loss due to ion induced annealing of the carbon films at high ion doses. The temperature and concentration dependencies of the ESR line shape and linewidth are explained using the mechanism of motional narrowing over the temperature range 4.2-300 K. Low temperature anisotropy of the g value is found in the ESR spectra and is explained as arising from the dipole-dipole interaction in the infinitely thin films.

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Section: Methodsmentioning

confidence: 99%

Effects of ion implantation on electron centers in hydrogenated amorphous carbon films

Konchits

Valakh

Shanina

et al. 2003

Journal of Applied Physics

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“…15,16,30 Recently, the formation mechanism of graphene from molecular precursors has been investigated. From the decay it was reasoned that dicarbon (C 2 -) species, formed as reaction intermediates, can contribute significantly to the built-up of graphene.…”

Section: Thermally Induced Chemical Vapor Deposition (Cvd) Was Used Tmentioning

confidence: 99%

Chemical Vapor Deposition of N-Doped Graphene and Carbon Films: The Role of Precursors and Gas Phase

et al. 2014

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Thermally induced chemical vapor deposition (CVD) was used to study the formation of nitrogen doped graphene and carbon films on copper from aliphatic nitrogen containingprecursors consisting of C 1 -and C 2 -units and (hetero) The deposition of carbon films from the gas phase leads to materials of widely different structure and composition. The films can be i) crystalline, e.g. like graphene, graphite or diamond and consist ideally of a single type of either sp 2 or sp 3 -hybridized carbon atoms, ii) can contain domains of any of these phases in more or less ordered arrangements, or iii) can even incorporate a considerable amount of hydrogen or other heteroatoms. Within this manifold of carbon films, graphene, a two-dimensional allotrope of carbon has recently attained high interest due to its electronic and optical properties and chemical inertness. [1][2][3] Graphene with controllable electronic properties is expected to be a promising material for the development of new electronic devices, 4,5 such as e.g. field-effect transistors 6 or electrochemical sensors, 7,8 as well as for applications in energy storage 9,10 and conversion systems like super capacitors, 11 lithium batteries, 12 and fuel cells. 13 Furthermore, transparent conducting graphene films are considered for organic electronic devices such as OLED's and organic solar cells. 14 Graphene itself does not reveal a band gap and therefore has no intrinsic semiconducting properties. Thus, doping of graphene with heteroelements like boron (B) or nitrogen (N), which fit into the carbon lattice, is an important issue. Theoretical and experimental studies indicate that B-or N-doped graphenes reveal p-or n-type semiconductor characteristics [15][16][17] accompanied by a band gap opening [18][19][20] and thus doped 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 graphene and structurally related graphene nanoribbons are considered as promising materials with tunable electronic properties. 21,22 N-Doped graphene, and particularly B-doped graphene are still scarcely investigated experimentally as compared to graphene 23 and graphene oxide. 24 So far, few methods for generating N-doped graphene are described. Among these are thermal CVD of methane and ammonia gas, 25 CVD of molecular precursors like pyridine 26 or acetonitrile 27 on a Cu substrate or exposure of graphene to a nitrogen 28 or ammonia 29 containing plasma discharge.In these reactions, the presence of nitrogen was identified by XPS, whereas the mechanism for nitrogen incorporation at specific positions of the graphene lattice is still not understood. 15,16,30 Recently, the formation mechanism of graphene from molecular precursors has been investigated. From the decay it was reasoned that dicarbon (C 2 -) species, formed as reaction intermediates, can contribute significantly to the built-up of graphene. 31 Sin...

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“…Graphene may o↵er a high degree of control over the arrangement and separation of nanoclusters, allowing templated growth of systems with specific cluster topologies and electronic structures. [6][7][8][9][10][11][12][13][14][15] The electronic interactions between graphene and the guest material play a central role in the early growth process. 16,17 A Monte Carlo study conducted by Guo et al 12 on ZnO nanoparticle growth on graphene showed that the deformation of Zn clusters and layering on the graphene provides suitable nucleation sites governed mainly by Zncarbon bond formation.…”

Section: Introductionmentioning

confidence: 99%

Growth of metalloid aluminum clusters on graphene vacancies

Alnemrat

Mayo

DeCarlo

et al. 2016

The Journal of Chemical Physics

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Ab initio simulations are used to show that graphene vacancy sites may o↵er a means of templated growth of metalloid aluminum clusters from their monohalide precursors. We present density functional theory and ab initio molecular dynamics simulations of the aluminum halide AlCl interacting with a graphene surface. Unlike a bare Al adatom, AlCl physisorbs weakly on vacancy-free graphene with little charge transfer and no hybridization with carbon orbitals. The barrier for di↵usion of AlCl along the surface is negligible. Covalent bonding is seen only with vacancies and results in strong chemisorption and considerable distortion of the nearby lattice. Car-Parrinello molecular dynamics simulations of AlCl liquid around a graphene single vacancy show spontaneous metalloid cluster growth via a process of repeated insertion reactions. This suggests a means of templated cluster nucleation and growth on a carbon substrate and provides some confirmation for the role of a trivalent aluminum species in nucleating a ligated metalloid cluster from AlCl and AlBr solutions. C 2016 AIP Publishing LLC. [http://dx

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Nitrogen doping of tetrahedral amorphous carbon

Cited by 236 publications

References 23 publications

Effects of ion implantation on electron centers in hydrogenated amorphous carbon films

Effects of ion implantation on electron centers in hydrogenated amorphous carbon films

Chemical Vapor Deposition of N-Doped Graphene and Carbon Films: The Role of Precursors and Gas Phase

Growth of metalloid aluminum clusters on graphene vacancies

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