Nitrogen doping-induced local structure change in a Cr₂Ge₂Te₆ inverse resistance phase-change material

Abstract

We investigated the crystallization behavior of Cr2Ge2Te6 (CrGT) and the effect of nitrogen (N) doping on it. We revealed that Ge or Cr-centered defective octahedral structure dominated in the amorphous...

Thermally-induced nanoscale phase change in chalcogenide glass Cr2Ge2Te6 revealed by scanning tunneling microscopy

“…© 2024 The Japan Society of Applied Physics corresponding to E g 2 and A g 1 modes, respectively. 34) As the annealing temperature increased, the Raman peaks became more pronounced, and other weak peaks, e.g., corresponding to E g 3 , E g 4 , and A g 2 modes, emerged. Based on the similarity to the Raman spectrum of single crystalline CrGT, we concluded that the annealing of CrGT thin films stimulated the growth of crystalline domains.…”

Recent progress in the theoretical design of two-dimensional ferroelectric materials

“…Another example is the theoretical prediction of the 2D FE material family M 2 (Ge, Sn) 2 Y 6 . One of the recently discovered 2D ferromagnetic materials, Gr 2 Ge 2 Te 6 [89] , [90] , [91] , exhibits Ge atom interlayer flipping behavior under high-pressure [ 92 , 93 ] and during the amorphous Cr 2 Ge 2 Te 6 crystalline process [94] . This indicates the possibility of inducing ferroelectricity in Cr 2 Ge 2 Te 6 -like structures through Ge atom displacement.…”

An isomorphic valency transition in SmTe film enabling nonvolatile resistive change

“…Based on isothermal resistive change (Fig. 3c), the 10-year data retention temperature (T 10years ) was estimated to be 262 °C for the reset state, a value much higher than the T 10years for GST: 85-110°C 36,37 or other PCMs (T 10years of 173 -221 °C 20,[38][39][40] (Table S1)).…”