Nitrogen-Doped p-Type ZnO Layers Prepared with H2O Vapor-Assisted Metalorganic Molecular-Beam Epitaxy

Ashrafi, Almamun; Suemune, I.; Kumano, H.; Tanaka, Satoru

doi:10.1143/jjap.41.l1281

Cited by 125 publications

(74 citation statements)

References 10 publications

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“…In support of this scenario, secondary ion mass spectroscopy measurements show that N can be doped to a level of more than 10 19 cm -3 [11], and electron paramagnetic resonance measurements confirm that N substitutes for O, in the ZnO lattice [49,50]. N-doped, p-type ZnO samples have been grown by chemical vapor deposition (CVD) [2], metal-organic CVD (MOCVD) [12,17,21], molecular beam epitaxy (MBE) [11], MOMBE [8], pulsed laser deposition (PLD) [3,5,6,10], and sputtering, both DC [16,20] and RF [15]. Obviously, p-type ZnO is amenable to growth by a variety of techniques.…”

Section: N-doped Znomentioning

confidence: 93%

P‐type doping and devices based on ZnO

Look

Claflin

2004

Physica Status Solidi (b)

522

293

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Both n‐type and p‐type ZnO will be required for development of homojunction light‐emitting diodes (LEDs) and laser diodes (LDs). It is easy to obtain strong n‐type ZnO, but very difficult to create consistent, reliable, high‐conductivity p‐type material. The most natural choice of an acceptor dopant is N, substituting for O, and indeed several groups have been able to obtain p‐type material by such doping. Surprisingly, however, other groups have also been successful with P and As, elements with much larger ionic radii than that of O. Although ZnO substrates are now available, most of the epitaxial p‐type layers so far have been grown on sapphire, or other poorly‐matched materials. The lowest p‐type resistivity obtained up to now is about 0.5 Ω‐cm, which should be sufficient for LED fabrication. In spite of the present availability of p‐type ZnO, very few homojunction LEDs have been reported so far, to our knowledge; however, several good heterojunction LEDs have been demonstrated, fabricated with p‐type layers composed of other materials. One such structure, with fairly strong 389‐nm emission at 300 K, involves n‐type ZnO and p‐type AlGaN, grown on an SiC substrate. Also, an N+‐ion implanted ZnO layer, deposited by chemical vapor deposition on Al2O3, exhibits 388‐nm emission at 300 K and could be economical to produce. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: N-doped Znomentioning

confidence: 93%

P‐type doping and devices based on ZnO

Look

Claflin

2004

Physica Status Solidi (b)

522

293

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“…For such device applications, advanced processes are required for the high-quality growth and highly efficient impurity doping. To date, MBE using oxygen-plasma cell [1], MOMBE using H 2 O vapor [2], PLD [3] etc. have been attractively studied to improve the structural and optoelectronic properties.…”

Section: Introductionmentioning

confidence: 99%

ZnO Heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium Oxide: Optoelectronic Behavior

Yamauchi¹,

Imai²

2013

CSTA

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Optoelectronic property of ZnO epitaxial layer grown by plasma-assisted epitaxy at temperature as low as 340˚C using Ti 2 O 3 buffer layer on a-sapphire were studied by low temperature photoluminescence at 10 K comparing to the layers on c-sapphire and a-sapphire without the buffer layer. The near band-edge emission consisting of free-exciton emissions and neutral-donor bound exciton emissions was significantly dependent on the buffer thickness and dominated by the free-exciton emissions in the layer grown on the very thin buffer layer about 0.8 nm, whereas the intense emissions by neutral-donor bound excitons were observed in the ZnO layer on c-sapphire. The structural behavior indicated the donor was originated from the three-dimensional growth of ZnO layer and details of the optoelectronic feature suggested the residual donors were Al and interstitial-Zn.

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“…[5][6][7][8] In addition to co-doping methods, it has been reported that p-type ZnO thin films can be grown by doping ZnO thin films with As contained in the GaAs substrate or with N, a popular p-type dopant that has been used by many research groups. [9][10][11][12][13] We recently reported on a reproducible and effective route to the production of p-type ZnO thin films with a high hole concentration by sputtering a ZnO target mixed with P 2 O 5 at high temperatures followed by a rapid thermal annealing process.…”

mentioning

confidence: 99%

Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering

Hwang

Kim

Lim

et al. 2005

Applied Physics Letters

233

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Phosphorus-doped p-type ZnO thin films were grown on sapphire by radio-frequency magnetron sputtering. The photoluminescence (PL) spectra revealed an acceptor bound exciton peak at 3.355 eV and a conduction band to the acceptor transition caused by a phosphorus related level at 3.310 eV. A study of the dependence of the excitation laser power density and temperature on the characteristics of the PL spectra suggests that the emission lines at 3.310 and 3.241 eV can be attributed to a conduction band to the phosphorus-related acceptor transition and a donor to the acceptor pair transition, respectively. The acceptor energy level of the phosphorus dopant was estimated to be located 127 meV above the valence band.

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Nitrogen-Doped p-Type ZnO Layers Prepared with H2O Vapor-Assisted Metalorganic Molecular-Beam Epitaxy

Cited by 125 publications

References 10 publications

P‐type doping and devices based on ZnO

P‐type doping and devices based on ZnO

ZnO Heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium Oxide: Optoelectronic Behavior

Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering

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