Nitrogen-Doped Graphene Nanoplatelets from Simple Solution Edge-Functionalization for n-Type Field-Effect Transistors

Abstract

The development of a versatile method for nitrogen-doping of graphitic structure is an important challenge for many applications, such as energy conversions and storages and electronic devices. Here, we report a simple but efficient method for preparing nitrogen-doped graphene nanoplatelets via wet-chemical reactions. The reaction between monoketone (C═O) in graphene oxide (GO) and monoamine-containing compound produces imine (Shiff base) functionalized GO (iGO). The reaction between α-diketone in GO and 1,2-diamine (ortho-diamine)-containing compound gives stable pyrazine ring functionalized GO (pGO). Subsequent heat-treatments of iGO and pGO result in high-quality, nitrogen-doped graphene nanoplatelets to be designated as hiGO and hpGO, respectively. Of particular interest, hpGO was found to display the n-type field-effect transistor behavior with a charge neutral point (Dirac point) located at around -16 V. Furthermore, hpGO showed hole and electron mobilities as high as 11.5 and 12.4 cm(2)V(-1)s(-1), respectively.

Polypropylene/Polyaniline Nanofiber/Reduced Graphene Oxide Nanocomposite with Enhanced Electrical, Dielectric, and Ferroelectric Properties for a High Energy Density Capacitor

“…These results suggest that the RGO sheets acted as nucleating agent for improving the thermal stability of PP nanocomposites. 32,[46][47][48]62 Figure 6b represents the Hoffman−Weeks plots for PP nanocomposites filled with different fillers. 63 The equilibrium temperature (T m 0 ) for PP nanocomposites was calculated using the equation…”

Controlled functionalization of graphene oxide with sodium azide

“…13 Approaches using GO as a precursor for N-doping lead to graphene that is rather N-doped due to functionalization at edges of defects than within the carbon framework. 14–16 These materials perform well for rewritable non-volatile memories or n-type field effect transistors through reactions with dimethylformamide or amino-benzene moiety. 15, 16 Nevertheless, one general drawback for making functionalized GO with these relatively reactive nitrogen containing reagents is its limited thermal stability and the dynamic change of GO’s chemical structure in aqueous media.…”

“…14–16 These materials perform well for rewritable non-volatile memories or n-type field effect transistors through reactions with dimethylformamide or amino-benzene moiety. 15, 16 Nevertheless, one general drawback for making functionalized GO with these relatively reactive nitrogen containing reagents is its limited thermal stability and the dynamic change of GO’s chemical structure in aqueous media. 17–19 Therefore, GO decomposes in water, and permanent defects are introduced in an uncontrolled manner by the cleavage of the carbon framework.…”

Terpyridine-Containing Imine-Rich Graphene for the Oxygen Reduction Reaction

“…However, IrGO-Tpy displayed two major characteristic peaks at 1576 and 1200 cm −1 , which are related to the in-plain vibrations of aromatic C=C sp 2 hybridized carbon and stretching modes of C=N, respectively [11]. In addition, the oxygenated peaks observed in GO decreased after its conversion to IrGO-Tpy, because of the efficient intramolecular and intermolecular acid-catalyzed dehydration reactions [22]. Thermogravimetric analysis (TGA) was also conducted in air, and the results are shown in Figure 2b.…”