2018
DOI: 10.1016/j.scriptamat.2018.04.049
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Nitrogen doped cuprous oxide as low cost hole-transporting material for perovskite solar cells

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Cited by 17 publications
(10 citation statements)
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References 25 publications
(18 reference statements)
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“…The PCE of the CuI-based HTM swiftly reached 16.8% in inverted planar architecture [20]. Inherent advantages, such as the ability to reduce the production costs, suitable energy levels, high hole mobility as well as enhancement of its resistance to degradation, make inorganic HTMs a promising class of materials to replace spiro-OMeTAD [21,22]. In addition, the stability of PSCs has been improved by inorganic HTMs and the conversion efficiency has rapidly increased in the past few years [23].…”
Section: Introductionmentioning
confidence: 99%
“…The PCE of the CuI-based HTM swiftly reached 16.8% in inverted planar architecture [20]. Inherent advantages, such as the ability to reduce the production costs, suitable energy levels, high hole mobility as well as enhancement of its resistance to degradation, make inorganic HTMs a promising class of materials to replace spiro-OMeTAD [21,22]. In addition, the stability of PSCs has been improved by inorganic HTMs and the conversion efficiency has rapidly increased in the past few years [23].…”
Section: Introductionmentioning
confidence: 99%
“…In fact, the idea of avoiding traps at the Cu 2 O/MAPI interface has been proven experimentally, by means of creating a buffer layer of spiro-MeOTAD between MAPI and Cu 2 O. 18,21,22 Let us consider the effects of the small, but non-negligible lattice mismatch between Cu 2 O and MAPI, which is 2% with our computational setup. For sufficiently thick films, the strain energy (see Table 2) can surpass the energy gain associated with the energy of adhesion.…”
Section: Discussionmentioning
confidence: 99%
“…Nitrogen-doped Cu 2 O has been proposed for tunnel recombination junction on tandem Si/PSC, 17 as well as for single-junction cells. 18 Improved 19% PCE has been achieved by the combination CuO x /MAPbI 3−y Cl y . 19 Liu et al 20 achieved a high 18.9% efficiency using Cu 2 O nanocubes deposited from solution on a mixed perovskite Cs 0.05 FA 0.81 MA 0.14 PbI 2.55 Br 0.45 .…”
Section: Introductionmentioning
confidence: 99%
“…For instance, a layer of spiro‐OMeTAD was introduced as a buffer after realizing that the lower performance was partially due to the defects formed at the Cu 2 O/perovskite interface. [ 121,122 ] In addition, nitrogen doping led to higher conductivity by introducing shallow acceptor states after the partial occupation of Cu + sites by N 2 , contributing to a higher PCE of 15.73%. [ 121 ] Further increase in the PCE was enabled by incorporating the optimal quantity of Cu in the resultant film to lift conductivity by reducing the O 2 partial pressure in the Ar/O 2 mixture.…”
Section: Htlsmentioning
confidence: 99%
“…[ 121,122 ] In addition, nitrogen doping led to higher conductivity by introducing shallow acceptor states after the partial occupation of Cu + sites by N 2 , contributing to a higher PCE of 15.73%. [ 121 ] Further increase in the PCE was enabled by incorporating the optimal quantity of Cu in the resultant film to lift conductivity by reducing the O 2 partial pressure in the Ar/O 2 mixture. [ 122 ] Using this strategy, a PCE of 17.11% was achieved.…”
Section: Htlsmentioning
confidence: 99%