Abstract:The dependence of the electronic properties of threading edge dislocations (TEDs) on the nitrogen (N) doping of 4H silicon carbide (4H-SiC) is investigated by combining first-principles calculations and experiments. First-principles calculations indicate that N atoms tend to accumulate at the cores of TEDs during the N doping of 4H-SiC, giving rise to the formation of TED-N complexes in N-doped 4H-SiC. The accumulation of N donors at the cores of TEDs leads to the donor-like behavior of TEDs in n-type 4H-SiC. … Show more
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