2011
DOI: 10.1063/1.3601467
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Nitrogen assisted etching of graphene layers in a scanning electron microscope

Abstract: We describe the controlled patterning of nanopores in graphene layers by using the low-energy ͑Ͻ10 keV͒ focused electron beam in a scanning electron microscope. Regular nanometer-sized holes can be fabricated with the presence of nitrogen gas. The effect of the gas pressure, beam current, and energy on the etching process are investigated. Transmission electron microscopy, coupled with plasmon energy loss imaging, reveals the microstructure modification of the etched graphene. A nitrogen-ion assisted etching m… Show more

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Cited by 56 publications
(33 citation statements)
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(20 reference statements)
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“…However, the crystal structure of the graphene must remain intact during the HIM processing of the graphene. In our previous work the effect of HIM irradiation on silicon has been investigated [23] and the effects of electron beam and argon ion irradiation on graphene have been evaluated [24,25]. The HIM beam induced damage and amorphization of graphene have yet to be comprehensively investigated.…”
Section: Introductionmentioning
confidence: 99%
“…However, the crystal structure of the graphene must remain intact during the HIM processing of the graphene. In our previous work the effect of HIM irradiation on silicon has been investigated [23] and the effects of electron beam and argon ion irradiation on graphene have been evaluated [24,25]. The HIM beam induced damage and amorphization of graphene have yet to be comprehensively investigated.…”
Section: Introductionmentioning
confidence: 99%
“…[21][22][23] However, graphene patterning by using low electron-beam energies is desirable for practical applications. Contaminants such as residual water, nitrogen, and oxygen presented on graphene or in the chamber are responsible for the low-energy knockout process, [24][25][26] and the mechanism was discussed in detail in ref. [ 23 ] In this chemically assisted low-energy knockout process, the contamination molecules are ionized by the incident electron beam (e-beam) and react with the e-beam-activated carbon DOI: 10.1002/smll.201401523 A polymer-free technique for generating nanopatterns on both synthesized and exfoliated graphene sheets is proposed and demonstrated.…”
Section: Polymer-free Patterning Of Graphene At Sub-10-nm Scale By Lomentioning
confidence: 99%
“…A low-energy focused electron beam in a SEM apparatus with nitrogen gas, successfully produced nanopores of <10 nm in size in graphene sheets [60], as shown in Fig. 4.…”
Section: Graphene Sheets Etched With Nitrogen In a Scanning Electron mentioning
confidence: 99%
“…All these methods provide porous graphene sheets with pores of different dimensions and most of them are expensive and time consuming, such as a TEM or SEM apparatus is needed [59,60] or many reactions steps are required as well as the purification of the material [61]. However, the method we developed seems to be a scalable and green approach for the synthesis of porous graphene.…”
Section: Nmmentioning
confidence: 99%