Nitrogen as dopant in silicon and germanium

Pavlov, P. V.; Zorin, E. I.; Tetelbaum, D. I.; Khokhlov, A. F.

doi:10.1002/pssa.2210350102

Cited by 64 publications

(8 citation statements)

References 41 publications

(11 reference statements)

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“…Compared to the SIMS data, we find that the activation rate for N in sample #1 is only 0.58% (a value very close to the crude estimation 0.53% given above), and the average activation rate for N and P in sample #2 is approximately 1.54%. Less than 1% activation rate of nitrogen in our case is consistent with the research in 1970s 27 , as the fraction of substitutional nitrogen is small. It is known that phosphorus implanted silicon has a high degree of electrical activity compared to nitrogen.…”

Section: Resultssupporting

confidence: 92%

Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers

Guan

Siampour

Fan

et al. 2015

Sci Rep

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This Report presents a nitrogen-doping method by chemically forming self-assembled monolayers on silicon. Van der Pauw technique, secondary-ion mass spectroscopy and low temperature Hall effect measurements are employed to characterize the nitrogen dopants. The experimental data show that the diffusion coefficient of nitrogen dopants is 3.66 × 10−15 cm2 s−1, 2 orders magnitude lower than that of phosphorus dopants in silicon. It is found that less than 1% of nitrogen dopants exhibit electrical activity. The analysis of Hall effect data at low temperatures indicates that the donor energy level for nitrogen dopants is located at 189 meV below the conduction band, consistent with the literature value.

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Section: Resultssupporting

confidence: 92%

Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers

Guan

Siampour

Fan

et al. 2015

Sci Rep

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“…Nitrogen gas is often used as inert atmosphere during post implantation annealing and as a carrier gas in semiconductor diffusion technology [ 211 ]. Therefore, the commercial silicon may contain nitrogen in dissolved form if no measures for cleaning are taken [ 32 ].…”

Section: Phase Diagramsmentioning

confidence: 99%

Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

Mostafa

Medraj

2017

Materials

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Fabrication of solar and electronic silicon wafers involves direct contact between solid, liquid and gas phases at near equilibrium conditions. Understanding of the phase diagrams and thermochemical properties of the Si-dopant binary systems is essential for providing processing conditions and for understanding the phase formation and transformation. In this work, ten Si-based binary phase diagrams, including Si with group IIIA elements (Al, B, Ga, In and Tl) and with group VA elements (As, Bi, N, P and Sb), have been reviewed. Each of these systems has been critically discussed on both aspects of phase diagram and thermodynamic properties. The available experimental data and thermodynamic parameters in the literature have been summarized and assessed thoroughly to provide consistent understanding of each system. Some systems were re-calculated to obtain a combination of the best evaluated phase diagram and a set of optimized thermodynamic parameters. As doping levels of solar and electronic silicon are of high technological importance, diffusion data has been presented to serve as a useful reference on the properties, behavior and quantities of metal impurities in silicon. This paper is meant to bridge the theoretical understanding of phase diagrams with the research and development of solar-grade silicon production, relying on the available information in the literature and our own analysis.

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“…This behavior is typical from implanted nitrogen and is the cause of nitrogen generally showing low electrical activity. 23,24 The vertical intensity distribution around the ͑004͒ reflection, shown in the left panel of Fig. 3, also indicates that there is almost no mosaicity in our implanted samples.…”

Section: Figmentioning

confidence: 59%

Strain profile of (001) silicon implanted with nitrogen by plasma immersion

Díaz

Abramof

Castro

et al. 2007

Journal of Applied Physics

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In this work, we investigate the strain and defect state of silicon implanted with nitrogen by plasma immersion ion implantation, with doses between 4.5×1016 and 8.7×1016 cm−2. For this purpose, we have used Auger electron spectroscopy, x-ray reflectivity, and high-resolution x-ray diffraction. Auger spectra showed that nitrogen concentration profiles broaden and shift deeper into the substrate as the dose increases. High oxygen concentration in the first 20 nm suggested the presence of an amorphous oxide layer at the sample surface, which was confirmed by x-ray reflectivity measurements. Reciprocal space maps revealed a tensile strain perpendicular to the surface, while no in-plane strain was detected. Since no significant diffuse scattering was found, randomly distributed point defects must be predominant in the strained region compared to large displacement field defects such as clusters and dislocations. ω∕2θ scans around (004) Bragg reflection were fitted using dynamical theory of x-ray diffraction. The strain profiles obtained from the best fits correlated well with nitrogen concentration depth profiles, signaling interstitial nitrogen as the main source of strain.

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Nitrogen as dopant in silicon and germanium

Cited by 64 publications

References 41 publications

Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers

Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers

Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

Strain profile of (001) silicon implanted with nitrogen by plasma immersion

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