Nitride passivation reduces interfacial traps in atomic-layer-deposited Al2O3/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

Aoki, Takuya; Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

doi:10.1063/1.4891431

Cited by 31 publications

(19 citation statements)

References 24 publications

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“…39 The same result was obtained for ZrO 2 /AlN/In 0.53 Ga 0.47 As structure, as reported by Weiland et al; in that study, an AlN layer (1 nm) formed by thermal ALD using TMA/NH 3 at 400…”

Section: B Growth Of Ald-al 2 O 3 / Aln/ Gaas Structuressupporting

confidence: 73%

“…Despite the atmospheric conditions employed, this process effectively improved the interface quality. 39 However, details of this process and the effects of various processing conditions on the electrical performance of the MOS capacitors were not investigated.…”

Section: -2 Aoki Et Almentioning

confidence: 99%

“…Problematic humps in the depletion region were mostly absent. The D it distribution included data relating to conventional Al 2 O 3 /GaAs interface 39 and Al 2 O 3 /AlN/GaAs interface without PDA optimization. As observed, optimizing the PDA conditions reduced the D it value at midgap from 4 × 10 12 to 2 × 10 12 cm −2 eV −1…”

Section: E Optimization Of Pda Conditionsmentioning

confidence: 99%

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Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

et al. 2015

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This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm−2 eV−1. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

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“…39 The same result was obtained for ZrO 2 /AlN/In 0.53 Ga 0.47 As structure, as reported by Weiland et al; in that study, an AlN layer (1 nm) formed by thermal ALD using TMA/NH 3 at 400…”

Section: B Growth Of Ald-al 2 O 3 / Aln/ Gaas Structuressupporting

confidence: 73%

Section: -2 Aoki Et Almentioning

confidence: 99%

Section: E Optimization Of Pda Conditionsmentioning

confidence: 99%

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Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

et al. 2015

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“…3a) resemble the one obtained in the case of metal-oxide(insulator)-semiconductor (MOS or MIS) structures, where the semiconductor has p-type conductivity [21]. The result can be explained assuming that the AlN layer is the insulator and the Boron doped Si ++ substrate is the semiconductor.…”

Section: Resultsmentioning

confidence: 51%

Electric and pyroelectric properties of AlN thin films deposited by reactive magnetron sputtering on Si substrate

Stan

Botea

Boni

et al. 2015

Applied Surface Science

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“…Intensive research efforts using the two most common ALD oxides of Al 2 O 3 and HfO 2 to passivate GaAs(001) have, therefore, been taken to reduce D it ’s [14,15,16,17,18,19,20,21,22]. Surface treatments including employing N 2 and insertion of interfacial passivation layers were used prior to ALD [23,24]. However, very strong disparity in the measured capacitance-voltage curves ( CV s) between n- and p-GaAs(001) using these two ALD oxides has been observed, with the n-type ones showing very large frequency dispersion at accumulation.…”

Section: Introductionmentioning

confidence: 99%

Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition

et al. 2015

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Single-crystal atomic-layer-deposited (ALD) Y2O3 films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE) GaAs(001)-4 × 6 and GaAs(111)A-2 × 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using in-situ reflection high-energy electron diffraction in our uniquely designed MBE/ALD multi-chamber system. More detailed studies on the crystallography of the hetero-structures were carried out using high-resolution synchrotron radiation X-ray diffraction. When deposited on GaAs(001), the Y2O3 films are of a cubic phase and have (110) as the film normal, with the orientation relationship being determined: Y2O3(110)[001][true1¯10]//GaAs(001)[110][1true1¯0]. On GaAs(111)A, the Y2O3 films are also of a cubic phase with (111) as the film normal, having the orientation relationship of Y2O3(111)[2true1¯true1¯][01true1¯]//GaAs(111)[true2¯11][0true1¯1]. The relevant orientation for the present/future integrated circuit platform is (001). The ALD-Y2O3/GaAs(001)-4 × 6 has shown excellent electrical properties. These include small frequency dispersion in the capacitance-voltage (CV) curves at accumulation of ~7% and ~14% for the respective p- and n-type samples with the measured frequencies of 1 MHz to 100 Hz. The interfacial trap density (Dit) is low of ~1012 cm−2eV−1 as extracted from measured quasi-static CVs. The frequency dispersion at accumulation and the Dit are the lowest ever achieved among all the ALD-oxides on GaAs(001).

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Nitride passivation reduces interfacial traps in atomic-layer-deposited Al2O3/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

Cited by 31 publications

References 24 publications

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

Electric and pyroelectric properties of AlN thin films deposited by reactive magnetron sputtering on Si substrate

Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition

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