Nitride film deposition by reactive ion beam sputtering

Erler, H.-J.; Reiße, G.; Weißmantel, C.

doi:10.1016/0040-6090(80)90257-6

Cited by 42 publications

(3 citation statements)

References 9 publications

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“…Multiple ion sources can also be used to provide extra ion bombardment of the substrate itself to influence film growth or to pre-clean the substrate before sputter deposition begins. Using reactive gases, such as oxygen, allows dielectrics to be deposited in a process known as reactive sputtering [105,107]. Here a plasma dissociates the feedstock gas, and the reaction products chemically interact with the target.…”

Section: Plasma Depositionmentioning

confidence: 99%

Foundations of plasmas as ion sources

Jorns¹,

Lafleur²

2023

Plasma Sources Sci. Technol.

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An overview of low temperature, partially-magnetized ion sources is presented. This class of devices is broadly characterized by plasma densities below 1019 m-3, electron temperatures below 100 eV, and magnetic field strength tailored such that electrons are magnetized whereas ions are not. The overarching approach is pedagogical, targeting an audience that does not necessarily have an expertise in low temperature devices. A tutorial is presented on the basic physics of operation of common ion sources including an overview of common methods for plasma generation and acceleration. A review of typical diagnostics and common applications of these plasma sources is also presented. Special attention is given to applications in plasma propulsion and materials processing. This class of ion sources is then discussed in the context of the current state of the field, key technical and scientific challenges, and future prospects.

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Section: Plasma Depositionmentioning

confidence: 99%

Foundations of plasmas as ion sources

Jorns¹,

Lafleur²

2023

Plasma Sources Sci. Technol.

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“…This is primarily due to limitations concerning its low deposition rate, complex maintenance, high cost and limited scalability for industrial application. Few studies investigated the impact of different process parameters including the ion beam energy [14][15][16], deposition temperature [17] and nitrogen partial pressure [18] on the optical and electrical properties of the silicon nitride film however none of these studies focuses on the coatings properties that relevant to GWDs research (i.e mechanical loss and optical absorption).…”

Section: Introductionmentioning

confidence: 99%

Non-stoichiometric silicon nitride for future gravitational wave detectors

Wallace,

Ben Yaala,

Tait

et al. 2024

Class. Quantum Grav.

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Silicon nitride thin films were deposited at room temperature employing a custom ion beam deposition (IBD) system. The stoichiometry of these films was tuned by controlling the nitrogen gas flow through the ion source and a process gas ring. A correlation is established between the process parameters, such as ion beam voltage and ion current, and the optical and mechanical properties of the films based on post-deposition heat treatment. The results show that with increasing heat treatment temperature, the mechanical loss of these materials as well as their optical absorption decreases producing films with an extinction coefficient as low as k = 6.2(±0.5)×10−7at 1064nm for samples annealed at 900○C. This presents the lowest value for IBD SiNx within the context of gravitational wave detector applications. The mechanical loss of the films was measured to be ϕ = 2.1(±0.6) × 10−4 once annealed post deposition to900○C.

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“…Its advantages are transparency in VIS and NIR spectra, together with wide range of refractive index varying between 2.063 for Si 3 N 4 [4] and 1.468 for SiO 2 [5] at the wavelength 500 nm. A variety of techniques can be used for SiO x N y deposition, including plasma enhanced chemical vapour deposition [6], ion assisted deposition [7], magnetron sputtering [8], or dual ion beam sputtering (DIBS) [9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Precision of Silicon Oxynitride Refractive-Index Profile Retrieval Using Optical Characterization

2021

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Layers with gradient refractive-index profile are an attractive alternative to conventional homogeneous stack coatings. However, the optical characterization and monitoring of the graded refractive-index profile is a complex issue, which has been typically solved by using a simplified model of mixed materials. Although this approach provides a solution to the problem, the precision, which can be expected from optical characterization of the refractive index gradient, remains unclear. In this work, we study optical characterization of SiO x N y layers deposited via reactive dual ion beam sputtering. To characterize the deposited layers, we use several methods including reflectance, and transmittance spectra at a broad range of incident angles, together with spectral ellipsometry. All the data were simultaneously fitted with a general profile of refractive index. The expected profile used in our fit was based on characterization of SiO x N y layers with a varying stoichiometry. By altering of the profile, we discussed sensitivity of such alternation on fit quality and we studied ambiguity of merit-function minimization. We demonstrate that while the scanning of particular parameters of the profile can be seemingly very precise, we obtain a very good agreement between the experimental data and model for a broad range of gradient shapes, where the refractive-index value on major part of the profile can differ as much as 0.02 from the mean value.

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Nitride film deposition by reactive ion beam sputtering

Cited by 42 publications

References 9 publications

Foundations of plasmas as ion sources

Foundations of plasmas as ion sources

Non-stoichiometric silicon nitride for future gravitational wave detectors

Precision of Silicon Oxynitride Refractive-Index Profile Retrieval Using Optical Characterization

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