Nitride and Other III-V Compounds

doi:10.1142/9789812835062_0002

Cited by 1 publication

(4 citation statements)

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“…The growth of bulk GaN crystals is typically carried out using high-pressure ammonia, often under supercritical conditions. , To test the effect of ammonia pressure on the colloidal synthesis of III-nitride nanocrystals, we developed a system for running solution phase reactions under high-pressure ammonia gas. A mixture of 5 mmol of KGaCl 4 , 4 mL of TOA, and 0.6 g of HDA was contained in a silicon nitride liner and preheated to 290 °C in a stainless-steel pressure vessel.…”

Section: Resultsmentioning

confidence: 99%

“…Gallium nitride (GaN) is a major semiconductor material for blue light-emitting diodes, lasers, and high-power and high-frequency electronic devices owing to its wide band gap, chemical stability, high breakdown electric field, and high electron saturation velocity. − Aluminum nitride (AlN) is another important group-III nitride material with intriguing properties such as an unusually strong ionicity of chemical bonds, very large absolute free energy of formation, a wide 6.0 eV bandgap, high thermal conductivity, and piezoelectricity. − Owing to these characteristics, AlN is used in optoelectronic devices, , high-power electronics, and microelectromechanical systems . As AlN and GaN are isostructural, they can form solid solutions ( i .…”

mentioning

confidence: 99%

“…Various methods have been developed to grow GaN and AlN bulk crystals in melts, solutions, fluxes, and supercritical ammonia. ,− III-nitride films have been grown on various substrates by vapor phase growth including physical vapor transport (PVT), metal organic chemical vapor deposition (MOCVD), molecular-beam epitaxy (MBE), and hydride vapor phase epitaxy (HVPE). ,, GaN and AlN with quasi one-dimensional (1D) structures such as nanorods, nanotubes, or nanocones have been produced through chemical vapor deposition (CVD), MBE, and template-assisted confined growth and their optoelectronic properties have been examined. − Thin two-dimensional (2D) GaN crystals have also been synthesized by encapsulated growth within the narrow gap between graphene and silicon carbide (SiC) and by surface-confined nitridation reaction on liquid metal. , …”

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confidence: 99%

“…Most CVD processes for GaN and AlN growth happen in the 500–1000 °C temperature range. , Other popular growth techniques for bulk GaN and AlN crystals require both high temperature and high pressure; e . g ., 350–850 °C and 100–500 MPa have been used in the ammonothermal syntheses. , Solution synthesis, however, typically uses high-boiling organic solvents that chemically decompose above 400 °C . Furthermore, typical laboratory glassware cannot access the pressure range previously identified suitable for growth of high-quality GaN crystals.…”

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confidence: 99%

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Synthesis of Colloidal GaN and AlN Nanocrystals in Biphasic Molten Salt/Organic Solvent Mixtures under High-Pressure Ammonia

et al. 2023

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Group III nitrides are of great technological importance for electronic devices. These materials have been widely manufactured via high-temperature methods such as physical vapor transport (PVT), chemical vapor deposition (CVD), and hydride vapor phase epitaxy (HVPE). The preparation of group III nitrides by colloidal synthesis methods would provide significant advantages in the form of optical tunability via size and shape control and enable cost reductions through scalable solution-based device integration. Solution syntheses of III-nitride nanocrystals, however, have been scarce, and the quality of the synthesized products has been unsatisfactory for practical use. Here, we report that incorporating a molten salt phase in solution synthesis can provide a viable option for producing crystalline III-nitride nanomaterials. Crystalline GaN and AlN nanomaterials can be grown in a biphasic molten-salt/organic-solvent mixture under an ammonia atmosphere at moderate temperatures (less than 300 °C) and stabilized under ambient conditions by postsynthetic treatment with organic surface ligands. We suggest that microscopic reversibility of monomer attachment, which is essential for crystalline growth, can be achieved in molten salt during the nucleation and the growth of the III-nitride nanocrystals. We also show that increased ammonia pressure increases the size of the GaN nanocrystals produced. This work demonstrates that use of molten salt and high-pressure reactants significantly expands the chemical scope of solution synthesis of inorganic nanomaterials.

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Section: Resultsmentioning

confidence: 99%