NiSi contact metallization using electroless Ni deposition on Pd-activated self-assembled monolayer (SAM) on p-type Si(100)

Duhin, Alla; Sverdlov, Yelena; Torchinsky, I.; Feldman, Yishay; Shacham‐Diamand, Yosi

doi:10.1016/j.mee.2007.05.067

Cited by 15 publications

(7 citation statements)

References 7 publications

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“…In this case, the absence may be explained by the residual nickel layer not involved in the silicidation process, which prevents a good detection. 7 GIXRD, RBS, and SEM measurements were also used to understand the variation in c with annealing temperature. Heat-treatment below 400°C led to a slight decrease in c .…”

Section: H744mentioning

confidence: 99%

“…4 However, there is little literature mentioned about nickel silicide formation by thermal treatment of electroless plating nickel-phosphorus ͑NiP͒ on a Si substrate. [5][6][7] In this paper, thermally annealed NiP/Si samples have been prepared and analyzed by means of Rutherford backscattering spectrometry ͑RBS͒, glancing incidence X-ray diffraction ͑GIXRD͒, scanning electron microscopy ͑SEM͒, and contact resistivity measurements. These results are discussed to provide a better understanding of the relation between the chemical transformations and the electrical properties of the NiP/Si system.…”

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confidence: 99%

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Electrical and Structural Characterization of Electroless Nickel–Phosphorus Contacts for Silicon Solar Cell Metallization

Boulord

Kaminski

Canut

et al. 2010

J. Electrochem. Soc.

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Electroless nickel plating is a very promising process for metallization of silicon solar cells. It can be used to form a seed layer for an electrolytic deposition of copper or silver because it ensures the required adherence, a low contact resistance, and prevent copper from diffusing into the silicon. The nickel plating technique developed in this work consists of a selective electroless nickel–phosphorus (NiP) deposition without the activation step from an alkaline bath containing sodium hypophosphite as a reducing agent and ammonia for pH control. Experimental results of the deposit properties are presented. Thin NiP layers of about 0.1μm on silicon were annealed under different conditions. Rutherford backscattering spectrometry, glancing incidence X-ray diffraction, and scanning electron microscopy were used to obtain information on silicide formation vs temperature. These results were correlated with contact resistivity measurements by the transmission line model. A typical contact resistivity of 10−4Ωcm2 has been obtained.

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Section: H744mentioning

confidence: 99%

mentioning

confidence: 99%

Electrical and Structural Characterization of Electroless Nickel–Phosphorus Contacts for Silicon Solar Cell Metallization

Boulord

Kaminski

Canut

et al. 2010

J. Electrochem. Soc.

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“…(2) [12]: In the plating process, Ni films were plated onto the SiNWs via the reaction as expressed by Eq. (3) [13][14][15]: Fig. 3(c).…”

Section: Nanowires/nanocomposites Characterizationsmentioning

confidence: 99%

Capacitive humidity sensors based on Ni/SiNWs nanocomposites

Tao

Zhang

Miao

et al. 2009

Sensors and Actuators B: Chemical

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“…Thanks to the application of SAMs, in particular, it is in many cases possible to perform electroless metallization on surfaces that would be difficult to efficiently coat. [35][36][37][38][39][40][41][42] Besides providing adequate adhesion between the substrate and the metallic layer, SAMs can also provide easy activation routes to start the autocatalytic deposition process. It is well-known, for example, that amine terminated SAMs actively adsorb Pd 2+ ions, which translates into an easy activation of the treated surface.…”

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confidence: 99%

Self-Assembled Monolayers Assisted all Wet Metallization of SU-8 Negative Tone Photoresist

Kołczyk-Siedlecka

Bernasconi

Lucotti

et al. 2020

J. Electrochem. Soc.

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The present work investigates the application of a Self-Assembled Monolayer (SAM) on the widely used negative photoresist SU-8. (3-Aminopropyl) trimethoxysilane (APTMS) is employed to form SAMs on the surface of the polymer through wet silanization in ethanol. The treatment process of SU-8 resin surface is optimized to achieve a well-formed, high quality SAM. Wettability measurements, atomic force microscopy (AFM) and infrared (IR) spectroscopy are employed to follow and optimize the silanization process. Following silanization, the resulting SAMs are employed as adhesion layers for electroless plated metallic layers. For this purpose, the superior affinity of APTMS amine terminal groups towards Pd2+ ions is exploited to activate the surface. Metallic coatings such as Cu, Ni–P or Co–Ni–P are thus deposited by mean of autocatalytic deposition. The surface of metallized samples is analyzed using AFM, scanning electron microscopy (SEM) and glow discharge optical emission spectroscopy (GDOES). Finally, Ni–P is deposited on a micropatterned SU-8 surface to demonstrate the potential of the presented metallization approach for microfabrication.

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NiSi contact metallization using electroless Ni deposition on Pd-activated self-assembled monolayer (SAM) on p-type Si(100)

Cited by 15 publications

References 7 publications

Electrical and Structural Characterization of Electroless Nickel–Phosphorus Contacts for Silicon Solar Cell Metallization

Electrical and Structural Characterization of Electroless Nickel–Phosphorus Contacts for Silicon Solar Cell Metallization

Capacitive humidity sensors based on Ni/SiNWs nanocomposites

Self-Assembled Monolayers Assisted all Wet Metallization of SU-8 Negative Tone Photoresist

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