Niobium as new material for electrolyte capacitors with nanoscale dielectric oxide layers

Fischer, V.; Störmer, Heike; Gerthsen, D.; Stenzel, M.; Zillgen, H.; Ivers‐Tiffée, Ellen

doi:10.1109/icpadm.2003.1218623

Cited by 11 publications

(5 citation statements)

References 2 publications

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“…It is important to note that niobium oxides have been extensively studied and, like most other oxides, their electrical properties are strongly dependent on stoichiometry [22,[28][29][30]. For example, the electrical conductivity of Nb 2 O 5 has been reported to vary over 7 orders of magnitude from 10 −13 to 10 −6 S m −1 , for deviations in stoichiometry in the range from NbO 2.489 to NbO 2.500 [31][32][33][34][35][36][37][38].…”

Section: Physical Characterizationmentioning

confidence: 99%

Anatomy of filamentary threshold switching in amorphous niobium oxide

Liu

Nandi

et al. 2018

Nanotechnology

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The threshold switching behavior of Pt/NbO /TiN devices is investigated as a function device area and NbO film thickness and shown to reveal important insight into the structure of the self-assembled switching region. The devices exhibit combined selector-memory (1S1R) behavior after an initial voltage-controlled forming process, but exhibit symmetric threshold switching when the RESET and SET currents are kept below a critical value. In this mode, the threshold and hold voltages are independent of the device area and film thickness but the threshold current (power), while independent of device area, decreases with increasing film thickness. These results are shown to be consistent with a structure in which the threshold switching volume is confined, both laterally and vertically, to the region between the residual memory filament and the TiN electrode, and where the memory filament has a core-shell structure comprising a metallic core and a semiconducting shell. The veracity of this structure is demonstrated by comparing experimental results with the predictions of a simple circuit model, and more detailed finite element simulations. These results provide further insight into the structure and operation of NbO threshold switching devices that have application in emerging memory and neuromorphic computing fields.

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Section: Physical Characterizationmentioning

confidence: 99%

Anatomy of filamentary threshold switching in amorphous niobium oxide

Liu

Nandi

et al. 2018

Nanotechnology

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“…Moreover, niobium pentoxide~Nb 2 O 5 ! recently gained considerable attention as an attractive dielectric material in high-capacity solid electrolyte capacitors~Zillgen et Fischer et al, 2003! because the material is more readily available and because it has a higher relative permittivity compared to the widely used tantalum pentoxide system.…”

Section: Introductionmentioning

confidence: 99%

EELS Investigations of Different Niobium Oxide Phases

et al. 2006

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Electron energy loss spectra in conjunction with near-edge fine structures of purely stoichiometric niobium monoxide (NbO) and niobium pentoxide (Nb2O5) reference materials were recorded. The structures of the niobium oxide reference materials were checked by selected area electron diffraction to ensure a proper assignment of the fine structures. NbO and Nb2O5 show clearly different energy loss near-edge fine structures of the Nb-M4,5 and -M2,3 edges and of the O-K edge, reflecting the specific local environments of the ionized atoms. To distinguish the two oxides in a quantitative manner, the intensities under the Nb-M4,5 as well as Nb-M2,3 edges and the O-K edge were measured and their ratios calculated. k-factors were also derived from these measurements.

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“…4(b) suggest that the change in value after low temperature PDA might be related to the stoichiometry of Nb O dielectric which is affected by the amount of oxygen. A similar behavior, the dependence of -characteristics on a series of oxidation/anneal steps, was recently reported [8], but underlying mechanism is not understood [9]. The value extracted from single Nb O film MIM capacitor after 420 C PDA is about 43.…”

Section: Methodsmentioning

confidence: 50%

“…Nb O has long been considered as a replacement of Ta O capacitors by the discrete component industry [8], [9], due to its greater availability (hence lower cost) and higher value, albeit smaller bandgap. Recent improvement in the purity of niobium powder has renewed the industry's interests in Nb O capacitors.…”

Section: Introductionmentioning

confidence: 99%

Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb/sub 2/O/sub 5/) with HfO/sub 2//Al/sub 2/O/sub 3/ barriers

Kim

Cho

et al. 2005

IEEE Electron Device Lett.

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A high capacitance density ( density ) metal-insulator-metal (MIM) capacitor with niobium pentoxide (Nb 2 O 5 ) whose value is higher than 40, is developed for integrated RF bypass or decoupling capacitor application. Nb 2 O 5 MIM with HfO 2 Al 2 O 3 barriers delivers a high density of 17 fF m 2 with excellent RF properties, while maintaining comparable leakage current and reliability properties with other high-dielectrics. The capacitance from the dielectric is shown to be stable up to 20 GHz, and resonant frequency of 4.2 GHz and of 50 (at 1 GHz) is demonstrated when the capacitor is integrated using Cu-BEOL process.Index Terms-Bypass capacitor, decoupling capacitor, highdielectric, metal-insulator-metal (MIM) capacitor, niobium oxide (Nb 2 O 5 ), radio frequency integrated circuit (RF IC).

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Niobium as new material for electrolyte capacitors with nanoscale dielectric oxide layers

Cited by 11 publications

References 2 publications

Anatomy of filamentary threshold switching in amorphous niobium oxide

Anatomy of filamentary threshold switching in amorphous niobium oxide

EELS Investigations of Different Niobium Oxide Phases

Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb/sub 2/O/sub 5/) with HfO/sub 2//Al/sub 2/O/sub 3/ barriers

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