NiO-based resistive memory devices with highly improved uniformity boosted by ionic liquid pre-treatment

Kang, Xin; Guo, Jianrong; Gao, Yingjie; Ren, Shan; Chen, Wei; Zhao, Xu

doi:10.1016/j.apsusc.2019.02.216

Cited by 29 publications

(28 citation statements)

References 46 publications

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“…Therefore, some thin film materials with good electrical conductivity are then chosen as candidates of the electrode, such as pure metal, semiconductor and graphene materials [1][2][3]. For most bipolar RRAM devices, reactive metal like titanium (Ti) [8], nickel (Ni) [9], copper (Cu) [10] and silver (Ag) [11] are always used as TE due to their high metal activity. Compared with reactive metal, where Platinum (Pt) [12] always acts as BE in order to provide activity variation of RRAM devices.…”

Section: Biological (Silk Protein) Polymer (Pvk) Perovskite (Ch3nh3snmentioning

confidence: 99%

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

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Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.

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Section: Biological (Silk Protein) Polymer (Pvk) Perovskite (Ch3nh3snmentioning

confidence: 99%

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

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“…With the development of memristor research for about half a century, RRAM devices received considerable attention as the most typical memristor. Apart from research on device performance, recent research was directed toward the study of materials with resistive switching (RS) function, such as binary transition metal oxides (TiO x , AlO x , and NiO x ) [3,[107][108][109][110][111], perovskite compounds (CH 3 NH 3 PbI 3 and CsPbBr 3 ) [54,55,112], ferromagnetic materials [112,113], biological materials [114,115], and graphene-based materials (graphene and GO) [30,116].…”

Section: Memristormentioning

confidence: 99%

“…Stop voltages of the set and reset process are defined as V SET and V RESET . In general, two different switching types are defined as unipolar and bipolar [3,[107][108][109][110][111], as illustrated in Figure 2. The unipolar switching mode is defined by the amplitude of the applied voltage bias, while the bipolar switching depends on the polarity of the applied voltage bias.…”

Section: Rram Device Characteristicsmentioning

confidence: 99%

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Memristive Non-Volatile Memory Based on Graphene Materials

Shen

Zhao

et al. 2020

Micromachines

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Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artificial intelligence (AI), due its advantages such as fast operation speed, low power consumption, and high device density. Graphene and related materials (GRMs), especially graphene oxide (GO), acting as active materials for RRAM devices, are considered as a promising alternative to other materials including metal oxides and perovskite materials. Herein, an overview of GRM-based RRAM devices is provided, with discussion about the properties of GRMs, main operation mechanisms for resistive switching (RS) behavior, figure of merit (FoM) summary, and prospect extension of GRM-based RRAM devices. With excellent physical and chemical advantages like intrinsic Young’s modulus (1.0 TPa), good tensile strength (130 GPa), excellent carrier mobility (2.0 × 105 cm2∙V−1∙s−1), and high thermal (5000 Wm−1∙K−1) and superior electrical conductivity (1.0 × 106 S∙m−1), GRMs can act as electrodes and resistive switching media in RRAM devices. In addition, the GRM-based interface between electrode and dielectric can have an effect on atomic diffusion limitation in dielectric and surface effect suppression. Immense amounts of concrete research indicate that GRMs might play a significant role in promoting the large-scale commercialization possibility of RRAM devices.

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“…From the viewpoint of macroscopic control, there are few methods that can be used to achieve a precisely wanted resistance state. Previous studies have reported on the use of dopants in the RS media and metal nanoparticles for the electric field concentration center to improve the performance reliability of RRAM devices. However, these methods do not fulfill the high commercialization standards needed for RRAM devices.…”

mentioning

confidence: 99%

Role of an Interfacial Layer in Ta₂O₅‐Based Resistive Switching Devices for Improved Endurance and Reliable Multibit Operation

Lee

Kim

Sohn

et al. 2019

Physica Rapid Research Ltrs

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A comparative study of two electrode materials is conducted to demonstrate the effect of the electrode material on the resistive switching (RS) behavior of Ta2O5‐based devices. Compared with a Pt top electrode (TE), application of a TiN TE shows an improved endurance of up to 109 cycles and a highly reliable 4 bit (16 states) operation. Various structural analyses reveal that this distinctive RS performance originates from an oxygen‐deficient layer (TaOx) between the Ta2O5 and TiN TEs. This interfacial layer improves the endurance of the device by acting as an oxygen reservoir that prevents the severe consumption of oxygen during repetitive RS and makes the device compatible with electrical pulse–based operations for stable multibit operation by acting as an appropriate load resistor. The results herein suggest that the optimized interfacial layer is essential for the development of high‐performance RS devices for future nonvolatile memory applications.

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NiO-based resistive memory devices with highly improved uniformity boosted by ionic liquid pre-treatment

Cited by 29 publications

References 46 publications

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Memristive Non-Volatile Memory Based on Graphene Materials

Role of an Interfacial Layer in Ta₂O₅‐Based Resistive Switching Devices for Improved Endurance and Reliable Multibit Operation

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NiO-based resistive memory devices with highly improved uniformity boosted by ionic liquid pre-treatment

Cited by 29 publications

References 46 publications

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Memristive Non-Volatile Memory Based on Graphene Materials

Role of an Interfacial Layer in Ta2O5‐Based Resistive Switching Devices for Improved Endurance and Reliable Multibit Operation

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Role of an Interfacial Layer in Ta₂O₅‐Based Resistive Switching Devices for Improved Endurance and Reliable Multibit Operation