Nikolaĭ Gennadievich Basov (on his 60th birthday)

Vul, B M; Keldysh, L. V.; Kopel'nikov, V A; Logunov, A. A.; Markov, M A; Nikol'skiĭ, S I; Plotnikov, A F; Prokhorov, A. M.; Skobel’tsyn, D. V.

doi:10.1070/pu1982v025n12abeh005015

Cited by 2 publications

(2 citation statements)

References 1 publication

(2 reference statements)

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“…The K,, and T,, define the threshold of the instability of the system and k,, is the wave vector of the arising structure. For the numerical solution of the arising equation for Sf:(') the parameters of the a-benzophenon crystal were chosen [4,5]. The We obtained that Re A(k) > 0 at certain parameters of the system.…”

Section: Calculations and Discussionmentioning

confidence: 99%

Light‐Induced Ferrielectric Structures in Exciton Systems in Molecular Crystals

Izvekov

Sugakov

1992

Physica Status Solidi (b)

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The possibility of spatial stratification of excitons and polarization in molecular crystals with traps for excitons at stationary pumping is considered. Such a structure can exist only under external irradiation and may be considered as an example of a dissipative structure which can arise in nonequilibrium systems. The numerical calculations are carried out for a-benzophenon crystals. It is shown that at some critical values of pumping rate and crystal temperature the homogeneous density of excitons becomes unstable and spatial stratification of excitons arises in the crystal. The dipole moment of the elementary cell becomes uncompensated and a periodically changing dipole moment exists. The critical values of pumping rate and crystal temperature and the period of the spatial stratification of exciton density are calculated.

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Section: Calculations and Discussionmentioning

confidence: 99%

Light‐Induced Ferrielectric Structures in Exciton Systems in Molecular Crystals

Izvekov

Sugakov

1992

Physica Status Solidi (b)

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“…Basov in his Nobel lecture in 1964 [64,65]. First experimental demonstration of an SDL as an extended format of vertical cavity semiconductor lasers was made by Jiang et al in 1991 [66].…”

Section: Semiconductor Disk Lasersmentioning

confidence: 99%

Nonlinear fibre-optic devices pumped by semiconductor disk lasers

Chamorovskiy¹,

Okhotnikov²

2012

Quantum Electron.

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Semiconductor disk lasers offer a unique combination of characteristics that are particularly attractive for pumping Raman lasers and amplifiers. The advantages of disk lasers include a low relative noise intensity (-150 dB Hz -1 ), scalable (on the order of several watts) output power, and nearly diffraction-limited beam quality resulting in a high (~70 % -90 %) coupling efficiency into a single-mode fibre. Using this technology, low-noise fibre Raman amplifiers operating at 1.3 mm in co-propagation configuration are developed. A hybrid Raman-bismuth doped fibre amplifier is proposed to further increase the pump conversion efficiency. The possibility of fabricating mode-locked picosecond fibre lasers operating under both normal and anomalous dispersion is shown experimentally. We demonstrate the operation of 1.38-mm and 1.6-mm passively mode-locked Raman fibre lasers pumped by 1.29-mm and 1.48-mm semiconductor disk lasers and producing 1.97-and 2.7-ps pulses, respectively. Using a picosecond semiconductor disk laser amplified with an ytterbium-erbium fibre amplifier, the supercontinuum generation spanning from 1.35 mm to 2 mm is achieved with an average power of 3.5 W.

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Nikolaĭ Gennadievich Basov (on his 60th birthday)

Cited by 2 publications

References 1 publication

Light‐Induced Ferrielectric Structures in Exciton Systems in Molecular Crystals

Light‐Induced Ferrielectric Structures in Exciton Systems in Molecular Crystals

Nonlinear fibre-optic devices pumped by semiconductor disk lasers

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