Nikolaĭ Evgen'evich Alekseevskiĭ (on his eightieth birthday)

Andreev, Aleksandr F.; Borovik-Romanov, A. S.; Zavaritskiǐ, N. V.; Nizhankovskiĭ, V I; Mitin, A. V.; Parshin, A. Ya.; Pitaevskiĭ, Lev P.

doi:10.1070/pu1992v035n06abeh002245

Cited by 11 publications

(14 citation statements)

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“…Andreev and Parshin 31) proposed the possibility from a general point of view that kinks on steps at a facet surface of the quantum solid can be moving, being created or annihilated violently, owing to a strong quantum fluctuation even at T ¼ 0. They even proposed that such kinks should be treated as one-dimensional quasi-particles with an energy band.…”

Section: )mentioning

confidence: 99%

New Aspects of Crystal Growth of Solid ⁴He Studied by Acoustic Wave

Okuda

Nomura

2008

J. Phys. Soc. Jpn.

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The new aspects of crystal growth in solid 4 He at low temperatures are revealed by manipulating the crystal with a radiation pressure of acoustic waves. The acoustic radiation pressure is generally a tiny nonlinear effect, but it has given unexpected effect on the surface of 4 He owing to the markedly high growth rate of the crystal. Radiation pressure induces crystallization or melting. Owing to the strong temperature dependences of the growth rate of an atomically rough surface, which increases divergingly towards T ¼ 0, and the numerical value of the ratio of the sound velocities in both phases, the crystal melts at high temperatures when the sound wave is applied from the solid side, while it grows at low temperatures under the same conditions. We found a new type of growth mechanism of a c-facet driven by a strong radiation pressure. The growth rate of a c-facet was found to be much higher than the conventional screw-dislocation-mediated mechanism. Theoretical analysis that treated elementary steps as quantum mechanical quasi-particles reproduced the observed important feasures. The superflow around steps was taken into account as the kinetic energy of the steps. Finally, it was demonstrated that the use of radiation pressure enables the creation of negative crystals or superfluid bubbles in the crystal. Various interesting motions and shapes of the negative crystal were observed and interpreted using a simple model.

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Section: )mentioning

confidence: 99%

New Aspects of Crystal Growth of Solid ⁴He Studied by Acoustic Wave

Okuda

Nomura

2008

J. Phys. Soc. Jpn.

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“…In the second case there is a new type of excitations at the surface: crystallization waves that do not conserve the total charge inside the droplets. 42 The problem of quantum roughening has been discussed in the framework of the properties of the boundary between solid and liquid He 3 and He 4 . 42 In the case of 2D surfaces between a 3D quantum liquid and crystal it has been argued that the surface is always quantum smooth.…”

Section: B Strongly Correlated Fermi Liquid In the Presence Of A Scamentioning

confidence: 99%

“…42 The problem of quantum roughening has been discussed in the framework of the properties of the boundary between solid and liquid He 3 and He 4 . 42 In the case of 2D surfaces between a 3D quantum liquid and crystal it has been argued that the surface is always quantum smooth. 43 At the moment nothing is known about the state of the boundary between two-dimensional liquid and solid.…”

Section: B Strongly Correlated Fermi Liquid In the Presence Of A Scamentioning

confidence: 99%

Phase separation in the two-dimensional electron liquid in MOSFET’s

Spivak

2003

Phys. Rev. B

105

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We show that the existence of an intermediate phase between the Fermi-liquid and the Wigner crystal phases is a generic property of the two-dimensional pure electron liquid in MOSFET's at zero temperature. The physical reason for the existence of these phases is a partial separation of the uniform phases. We discuss properties of these phases and a possible explanation of experimental results on transport properties of lowdensity electron gas in Si MOSFET's. We also argue that in a certain range of parameters, the partial phase separation corresponds to a supersolid phase discussed in F. Andreev and I. M. Lifshitz ͓Sov. Phys. JETP 48,

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“…For a pure 4 He, temperature dependence of γ is very weak at low temperatures [26], even when taking into account possible new roughening transitions [24], and does not contribute to the slope of the measured melting curve. Due to the adsorption of 3 He impurities at low temperatures, γ may decrease by about 20% [27], which would produce a decrease of the measured pressure by a few µbar at most with decreasing temperature.…”

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confidence: 99%

Melting Curve ofHe4: No Sign of a Supersolid Transition down to 10 mK

Todoshchenko¹,

Alles²,

Bueno³

et al. 2006

Phys. Rev. Lett.

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We have measured the melting curve of 4 He in the temperature range from 10 to 400 mK with the accuracy of about 0.5 µbar. Crystals of different quality show the expected T 4 -dependence in the range from 80 to 400 mK without any sign of the supersolid transition, and the coefficient is in excellent agreement with available data on the sound velocity in liquid 4 He and on the Debye temperature of solid 4 He. Below 80 mK we have observed a small deviation from T 4 -dependence which however cannot be attributed to the supersolid transition because instead of decrease the entropy of the solid rather remains constant, about 2.5 × 10 −6 R.

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Nikolaĭ Evgen'evich Alekseevskiĭ (on his eightieth birthday)

Cited by 11 publications

References 0 publications

New Aspects of Crystal Growth of Solid ⁴He Studied by Acoustic Wave

New Aspects of Crystal Growth of Solid ⁴He Studied by Acoustic Wave

Phase separation in the two-dimensional electron liquid in MOSFET’s

Melting Curve ofHe4: No Sign of a Supersolid Transition down to 10 mK

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Nikolaĭ Evgen'evich Alekseevskiĭ (on his eightieth birthday)

Cited by 11 publications

References 0 publications

New Aspects of Crystal Growth of Solid 4He Studied by Acoustic Wave

New Aspects of Crystal Growth of Solid 4He Studied by Acoustic Wave

Phase separation in the two-dimensional electron liquid in MOSFET’s

Melting Curve ofHe4: No Sign of a Supersolid Transition down to 10 mK

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New Aspects of Crystal Growth of Solid ⁴He Studied by Acoustic Wave

New Aspects of Crystal Growth of Solid ⁴He Studied by Acoustic Wave