Nickel silicide contact for silicon solar cells

Bandopadhyay, S.; Gangopadhyay, Utpal; Mukhopadhyay, K.; Saha, Hiranmay; Chatterjee, A. K.

doi:10.1007/bf02745298

Cited by 7 publications

(3 citation statements)

References 13 publications

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“…Our wafers satisfied the conditions of high conductivity, low shadowing, low contact resistance, and minimal resistance loss. [18][19][20][21][22][23]. To assess the selective properties, we conducted a deposition experiment using a crystalline-shaped solar-cell wafer identical to the one shown in Fig.…”

Section: Experiments and Discussionmentioning

confidence: 99%

Selectivities of an all-wet-processed electrode film on ITO, ZnO, SiNx and doped Si for solar cell applications

Kim

Choi

Lee

et al. 2014

Journal of the Korean Physical Society

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We investigated the role of Ni/Cu metallization and the characteristics of selective thin-film deposition on the Indium tin oxide (ITO), ZnO, SiNx and doped Si surfaces of a silicon solarcell electrode. We propose Ni/Cu metallization as an alternative to silver screen-printing. Our method, called the selective electrode formation (SEF) process, utilizes a low-cost, streamlined wet chemical process. Metallization was confirmed to occur on the Si electrode with adhesion through Pd activation. Ni, which hinders Cu diffusion, was then selectively deposited from a NaH2PO2 based nickel solution, and Cu, the main electrode material, was deposited from a HCHObased copper solution. Ni/Cu was deposited on the ZnO, ITO, or SiNx film. The deposition and the heat treatment of Ni and Cu were successfully performed on a substrate consisting of a patterned n + -doped wafer with POCl3 by maintaining the same steady process conditions as in process.

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Section: Experiments and Discussionmentioning

confidence: 99%

Selectivities of an all-wet-processed electrode film on ITO, ZnO, SiNx and doped Si for solar cell applications

Kim

Choi

Lee

et al. 2014

Journal of the Korean Physical Society

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“…The processes and raw materials used for these solar cells include FZ (float zone) wafers, buried metal contacts, selective diffusion and PdCl 2 activation for Ni deposition. Bandyopadhyay et al [23] and Vitanov et al [24], fabricated the Ni/Cu plated front contact solar cells using conventional fabrication steps of texturization, diffusion, anti reflection coating (ARC) deposition of silicon nitride (Si x N y ) and back surface field (BSF). However, the front metal contacts were fabricated using plasma and vacuum processes.…”

Section: Introductionmentioning

confidence: 99%

A novel two step metallization of Ni/Cu for low concentrator c-Si solar cells

Chaudhari

Solanki

2010

Solar Energy Materials and Solar Cells

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“…6,7 To avoid these detrimental effects, annealing of nickel seed layer is typically done in temperature range of 300-500 • C for short * Author for correspondence (mehul.c.raval@iitb.ac.in) durations. 3,4,[8][9][10][11][12] However, a clear relation does not exist between annealing conditions and nickel silicide formation with associated contact resistivity of the interface, though studies have been performed for higher temperature ranges. 13,14 In the present work, a thin electroless nickel seed layer is deposited with and without Pd activation to study silicide formation and contact resistivity at the interface for annealing durations of 30-60 s in temperature range of 400-420 • C. Phase identification studies for the seed layer and silicides is performed using X-ray diffraction (XRD) technique.…”

Section: Introductionmentioning

confidence: 99%

Characterization of electroless nickel as a seed layer for silicon solar cell metallization

Raval

Solanki

2015

Bull Mater Sci

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Electroless nickel plating is a suitable method for seed layer deposition in Ni-Cu-based solar cell metallization. Nickel silicide formation and hence contact resistivity of the interface is largely influenced by the plating process and annealing conditions. In the present work, a thin seed layer is deposited from neutral pH and alkaline electroless nickel baths which are annealed in the range of 400-420 • C for silicide morphology and contact resistivity studies. A minimum contact resistivity of 7 m cm 2 is obtained for seed layer deposited from alkaline bath. Silicide formation for Pd-activated samples leads to uniform surface morphology as compared with unactivated samples due to non-homogeneous migration of nickel atoms at the interface. Formation of nickel phosphides during annealing and the presence of SiO 2 at Ni-Si interface creates isolated Ni 2 Si-Si interface with limited supply of silicon. Such an interface leads to the formation of high resistivity metal-rich Ni 3 Si silicide phase which limits the reduction in contact resistivity.

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Nickel silicide contact for silicon solar cells

Cited by 7 publications

References 13 publications

Selectivities of an all-wet-processed electrode film on ITO, ZnO, SiNx and doped Si for solar cell applications

Selectivities of an all-wet-processed electrode film on ITO, ZnO, SiNx and doped Si for solar cell applications

A novel two step metallization of Ni/Cu for low concentrator c-Si solar cells

Characterization of electroless nickel as a seed layer for silicon solar cell metallization

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