Nickel Metal Induced Lateral Crystallization of Patterned Amorphous Silicon Thin Film

Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation

“…30) The C-and G-lines described in the preceding section were observed in the deep-level region. [13][14][15]17,[19][20][21][22][23][24] The C concentration increases with g. All the dopant-impurity-related exciton lines disappeared and only I TO emission was observed at 77 K, as shown in Fig. 1(b).…”

“…Until recently, various researchers carried out C quantification by the PL method using the Cand G-lines, where the PL measurement was performed at liquid He temperature (4.2 K) in all cases. 14,16,[18][19][20][21][22][23][24] Recently, we have demonstrated that the C-and G-lines are observable at liquid N temperature (77 K). 25) There are two major differences between the PL spectra at 4.2 and 77 K. First, the C-and G-lines are very sharp at 4.2 K, while those become broad at 77 K. This broadening leads to high sensitivity and high-speed measurement.…”

Anomalous excitation-power dependence of band-edge emission in Si involving radiation-induced defects

“…Recently the PL technique has been applied also for C impurities in Si. [24][25][26][27][28][29][30][31][32] Since C impurities are electrically inactive in as-grown state, the high energy particle irradiation is necessary to form luminescence-active defects involving C atoms. For this purpose, electron irradiation with an accelerating voltage of around 1 MeV is typically utilized to generate luminescence-active interstitial C and substitutional C complexes (C i -C s ) and C i and interstitial O complexes (C i -O i ).…”

“…The C i -C s and C i -O i defects yield G-line at 0.969 eV and C-line at 0.789 eV, respectively, at 4.2 K. 33,34) The intensity ratios of these lines to the intrinsic line [free exciton (FE)] are used as measures of the C concentration. [27][28][29][30][31][32] Although major works on the G-and C-lines were performed at liquid He temperature, the G-and C-lines are observable up to 120 and 160 K, respectively. A broad band termed C08-band having the similar origin as the C-line is detectable even at room temperature.…”

Detection limit of carbon concentration measurement in Si for photoluminescence method after electron irradiation

“…The photoluminescence (PL) method is known as one of the most sensitive methods to evaluate impurities in Si and has been standardized by the JIS standard 7) as a method to quantify donor and acceptor impurities. [8][9][10][11][12] In recent years, the PL method after electron irradiation has attracted considerable attention as a highly sensitive method for the determination of the C concentration, [13][14][15][16][17][18][19][20] where the method focuses on the G-line at 0.969 eV originating from radiationinduced defects of interstitial C and substitutional C complexes (C i -C s ). The method is in the process of the standardization for Si crystals with the O concentration of about 1-2 × 10 17 cm −3 with the resistivity of higher than 50 Ω • cm for n-type and higher than 5 kΩ • cm for p-type, and the calibration curve has been obtained in the C concentration ranging from 1 × 10 14 to 3 × 10 15 cm −3 .…”