Nickel Interaction with Vacancy‐Type Radiation Defects in Silicon

Abstract

The deep‐level spectrum of silicon irradiated with high‐energy electrons is modified by room‐temperature nickel in‐diffusion. Two types of Si samples are compared: The oxygen‐lean floating‐zone (FZ) and the oxygen‐rich Czochralski‐grown (Cz) crystals where the dominant vacancy‐type radiation defects are the vacancy–phosphorus (VP) and the vacancy–oxygen (VO) pairs, respectively. Both types of Ni‐diffused samples exhibit similar deep‐level spectra: The DLTS signatures of the VP and VO centers are totally converted into a novel peak at ≈180 K. Detailed Laplace‐DLTS studies show that the complexes formed in the FZ‐ and Cz‐Si are however different: The electron emission rates from the nickel‐related centers exhibit unequal activation energies (0.35 eV for NiVP in FZ‐Si and 0.37 eV for NiVO in Cz‐Si) and demonstrate quantitatively differing responses to the electric field. The origin for the similarity of the NiVP and NiVO complexes is discussed.

Nucleation of Nickel Disilicide Precipitates in Float‐Zone Silicon: The Role of Vacancies

“…[41] Finally, we want to briefly comment on the possible effects of Ni i -vacancy complexes such as Ni i -(VP) or Ni i -(VO), where interstitial nickel binds to vacancy-phosphorus or vacancy-oxygen pairs, where Ni i stays out of the vacancy. [42] Such defects have been discussed in relation to nickel-related defects observed after electron irradiation [43] and also for iron-related species after plastic deformation. [44] One may speculate that adding another interstitial impurity atom to such defects could catalyze the collapse of one of the interstitial metal atoms into the vacancy leading to a similar situation as discussed here.…”

Electrical Activation of Interstitial Ni in Cu‐Doped Si

“…The efficiency of such a procedure for introduction in n‐type crystals was already demonstrated. [ 3,18 ] After the KOH:Ni treatment, the sample surface had a matt finish. Therefore, a layer of was additionally removed by etching in a slow‐working acid solution ().…”