Nickel, cobalt and iron silicide formation stimulated by Argon implantation

Tokarev, V. V.; Kibardin, A.V.; Pyatkova, T. M.; Zarovsky, D.I.

doi:10.1016/0169-4332(90)90054-4

Applied Surface Science

1990

DOI: 10.1016/0169-4332(90)90054-4

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Nickel, cobalt and iron silicide formation stimulated by Argon implantation

V. V. Tokarev¹,

A.V. Kibardin²,

T. M. Pyatkova³

et al.

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Cited by 3 publications

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“…[15] FeSi 2 thin film (iron deposited thickness is 4-100 nm) annealed from 400-950 • C for 10-40 s, has a resistivity of about 60-80 µΩ•cm at room temperature. [16] Using c-AFM, we obtain ρ = 225 µΩ•cm for NWs. One can expect that the resistivity in the NWs to be larger than bulk values due to intrinsic effects including interface scattering along the length of the NW and possibly onedimensional confinement effects.…”

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confidence: 94%

Electrical and Magnetic Properties of FeSi ₂ Nanowires

Peng

Liang

2008

Chinese Phys. Lett.

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We report the characterization of self-assembled epitaxially grown FeSi2 nanowires (NWs) in terms of electrical and magnetic properties. NWs grown by reactive deposition epitaxy (RDE) on silicon (110) show dimensions of 10nm × 5nm, and several micrometres in length. By using conductive-AFM (c-AFM), electron transport properties of one single NW is measured, resistivity of a single crystalline FeSi'2 NW is estimated to be 225 μΩ·cm. Using superconducting quantum interference device (SQUID), we measure a magnetic moment of 0.3 ± 0.1 Bohr magneton per iron atom for these FeSi2 NWs.

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mentioning

confidence: 94%

Electrical and Magnetic Properties of FeSi ₂ Nanowires

Peng

Liang

2008

Chinese Phys. Lett.

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Thermal spike mixing in cobalt silicide formation

Collins

Edwards

Dearnaley

1991

J. Phys. D: Appl. Phys.

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Ion beam mixing in cobalt silicide has been studied using silicon, argon and helium ions. Both Co-Si and Co-SiO2-Si systems have been studied, the latter in the form of coated silicon wafers which have not had their native oxide removed. Dose and temperature dependence and the effects of post-bombardment annealing have been studied. Oxide free samples show both temperature dependent and temperature independent mixing regimes. Mixing is retarded in samples with an oxide layer and this is reflected in the mixing activation energies which for Si+ ions are 0.90+or-0.28 eV and 2.17+or-0.79 eV for the two types of sample. There is evidence that implanted Si dilutes the interfacial barrier and enhances migration. The results indicate that the chemical species of the ion is important in determining the degree of mixing. Argon ion dose dependence experiments indicate a minimum dose of 1*1016 ions cm-2 for the onset of mixing (at 350 degrees C) in both types of sample. Temperature dependence studies have yielded mixing activation energies for Ar+ ions of 0.46+or-0.10 eV from the Co-Si samples and 0.64+or-0.18 eV for the samples with oxide present. These values are intermediate between those obtained for Si and Xe bombarded samples. He+ ion bombardment studies indicate that mixing is not associated with ionization spikes. Considerations of ion concentration, bombardment flux, silicide thickness and activation energies favour thermal spike mixing rather than models based on radiation enhanced diffusion.

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Electrical characterization of epitaxial FeSi₂ nanowire on Si (110) by conductive-atomic force microscopy

Liang

Ashcroft

2010

J. Mater. Res.

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We used conductive-atomic force microscopy (c-AFM) for electrical characterization of self-assembled epitaxial iron silicide nanowires (NWs) on Si (110). The NWs, 6 nm high by 10 nm wide and several micrometers long, were partially covered by a macro-gold-pad as one electrode. Another electrode is the conductive AFM tip. The resistance of a single FeSi2 NW was measured to be 29.7 kΩ, corresponding to a resistivity of 150 ± 30 μΩ·cm. A Schottky barrier formed between NWs and silicon substrate was clearly demonstrated, which offers electrical isolation for NWs. An equivalent circuit model based on the Schottky barrier was proposed and was correlated with measurement results. This simple electrical characterization approach may find wide applications for various one-dimensional nanostructures.

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Nickel, cobalt and iron silicide formation stimulated by Argon implantation

Cited by 3 publications

References 6 publications

Electrical and Magnetic Properties of FeSi ₂ Nanowires

Electrical and Magnetic Properties of FeSi ₂ Nanowires

Thermal spike mixing in cobalt silicide formation

Electrical characterization of epitaxial FeSi₂ nanowire on Si (110) by conductive-atomic force microscopy

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Nickel, cobalt and iron silicide formation stimulated by Argon implantation

Cited by 3 publications

References 6 publications

Electrical and Magnetic Properties of FeSi 2 Nanowires

Electrical and Magnetic Properties of FeSi 2 Nanowires

Thermal spike mixing in cobalt silicide formation

Electrical characterization of epitaxial FeSi2 nanowire on Si (110) by conductive-atomic force microscopy

Contact Info

Product

Resources

About

Electrical and Magnetic Properties of FeSi ₂ Nanowires

Electrical and Magnetic Properties of FeSi ₂ Nanowires

Electrical characterization of epitaxial FeSi₂ nanowire on Si (110) by conductive-atomic force microscopy