Nickel and gold identification in p-type silicon through TDLS: a modeling study

Abstract

In Silicon, impurities introduce recombination centers and degrade the minority carrier lifetime. It is therefore important to identify the nature of these impurities through their characteristics: the capture cross section σ and the defect level Et. For this purpose, a study of the bulk lifetime of minority carriers can be carried out. The temperature dependence of the lifetime based on the Shockley-Read-Hall (SRH) statistic and related to recombination through defects is studied. Nickel and gold in p-type Si have been selected for the SRH lifetime modeling. The objective of the analysis is to carry out a study to evaluate gold and nickel identification prior to temperature-dependent lifetime measurements using the microwave phase-shift (μW-PS) technique. The μW-PS is derived from the PCD technique and is sensitive to lower impurity concentrations. It has been shown that both gold and nickel can be unambiguously identified from the calculated TDLS curves.

The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

“…Electrical, photoelectric, optical and other properties of semiconductor materials and structures based on them are determined by the presence of impurities and structural defects in crystals [1][2][3][4]. It should be noted that impurity defects can appear not only at the stage of obtaining materials, but also in the technological processes of manufacturing semiconductor devices [5][6][7].…”