Ni-mediated reactions in nanocrystalline diamond on Si substrates: the role of the oxide barrier

Tulić, Semir; Waitz, Thomas; Romanyuk, O.; Varga, M.; Čaplovičová, Mária; Habler, Gerlinde; Vretenár, Viliam; Kotlár, Mário; Kromka, Alexander; Rezek, Bohuslav; Skákalová, Viera

doi:10.1039/d0ra00809e

Cited by 7 publications

(10 citation statements)

References 34 publications

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“…In this case, the low temperature deposition process (at ∼ 330 • C) was used in order to avoid re-crystallization of metal layers at high temperatures, and minimize unwanted effects such as a catalytic graphitization of diamond [7], [8]. It is well-known, that the use of Ni on single-crystal and polycrystalline diamonds often results in the formation of graphitic layers at the Nidiamond interface or on top of the catalyst [9][10][11]. This effect is often utilized for the fabrication of graphene layers [10] or an array of sharp diamond microneedles [12].…”

Section: Resultsmentioning

confidence: 99%

Effects of metal layers on chemical vapor deposition of diamond films

Izsák

Vanko

Babčenko

et al. 2022

Journal of Electrical Engineering

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Diamond is recognized as one of the most promising wide bandgap materials for advanced electronic applications. However, for many practical uses, hybrid diamond growth combining metal electrodes is often demanded. Here, we present the influence of thin metal (Ni, Ir, Au) layers on diamond growth by microwave plasma chemical vapor deposition (MWCVD) employing two different concepts. In the first concept, a flat substrate (GaN) was initially coated with a thin metal layer, then exposed to the diamond MWCVD process. In the second concept, the thin diamond film was firstly formed, then it was overcoated with the metal layer and finally, once again exposed to the diamond MWCVD. It should be mentioned that this concept allows the implementation of the metal electrode into the diamond bulk. It was confirmed that the Ni thin films (15 nm) hinder the formation of diamond crystals resulting in the formation of an amorphous carbon layer. Contrary to this finding, the Ir layer resulted in a successful overgrowth by the fully closed diamond film. However, by employing concept 2 (ie hybrid diamond/metal/diamond composite), the thin Ir layer was found to be unstable and transferred into the isolated clusters, which were overgrown by the diamond film. Using the Au/Ir (30/15 nm) bilayer system stabilized the metallization and no diamond growth was observed on the metal layer.

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Section: Resultsmentioning

confidence: 99%

Effects of metal layers on chemical vapor deposition of diamond films

Izsák

Vanko

Babčenko

et al. 2022

Journal of Electrical Engineering

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“…Recently, the underlying mechanisms of metal-catalyzed diamond etching have been revealed through HRTEM characterizations. 57,94,177 According to Tulic et al, graphite filled the channels along the diamond GBs during the nickel (Ni)-catalyzed etching process and a hemispherical Ni particle was present at the front of the graphite channels (Figure 6A). 94 The graphitic planes are covalently bonded to diamond with an upright orientation (Figure 6B).…”

Section: Metal-catalyzed Transitionmentioning

confidence: 99%

“…179 They also investigated the Ni-catalyzed phase transformation of thin NCD films formed on silicon wafers with native SiO 2 layer. 177 For the diamond synthesis process, the continuous SiO 2 layer remained at the relatively moderate plasma conditions, while the a-SiC can form from the SiO 2 at high-power plasma conditions. The permeability of SiO 2 and a-SiC layer to Ni can lead to different reactions.…”

Section: Metal-catalyzed Transitionmentioning

confidence: 99%

Rational design of diamond through microstructure engineering: From synthesis to applications

Ku,

Huang,

et al. 2024

Carbon Energy

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Diamond possesses excellent thermal conductivity and tunable bandgap. Currently, the high‐pressure, high‐temperature, and chemical vapor deposition methods are the most promising strategies for the commercial‐scale production of synthetic diamond. Although diamond has been extensively employed in jewelry and cutting/grinding tasks, the realization of its high‐end applications through microstructure engineering has long been sought. Herein, we discuss the microstructures encountered in diamond and further concentrate on cutting‐edge investigations utilizing electron microscopy techniques to illuminate the transition mechanism between graphite and diamond during the synthesis and device constructions. The impacts of distinct microstructures on the electrical applications of diamond, especially the photoelectrical, electrical, and thermal properties, are elaborated. The recently reported elastic and plastic deformations revealed through in situ microscopy techniques are also summarized. Finally, the limitations, perspectives, and corresponding solutions are proposed.

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“…A superior interfacial bonding strength of ∼150 GPa was observed due to the formation of the covalently bonded diamond−graphene heterostructure. Tulićet al demonstrated the Ni-mediated graphitization of nanocrystalline diamonds on Si substrates by annealing in a tube furnace under vacuum condition at ∼1100 K. 253,254 The Ni particles catalytically etched the grain boundaries of diamond to release free carbon atoms, which covalently attached to the dangling bonds of diamond. As a result, the formed graphite planes were covalently bonded to the diamond surfaces in the perpendicular orientation (Figure 26a).…”

Section: Templated Synthesismentioning

confidence: 99%

Recent Progress on Phase Engineering of Nanomaterials

Yun,

Ge,

Shi

et al. 2023

Chem. Rev.

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As a key structural parameter, phase depicts the arrangement of atoms in materials. Normally, a nanomaterial exists in its thermodynamically stable crystal phase. With the development of nanotechnology, nanomaterials with unconventional crystal phases, which rarely exist in their bulk counterparts, or amorphous phase have been prepared using carefully controlled reaction conditions. Together these methods are beginning to enable phase engineering of nanomaterials (PEN), i.e. , the synthesis of nanomaterials with unconventional phases and the transformation between different phases, to obtain desired properties and functions. This Review summarizes the research progress in the field of PEN. First, we present representative strategies for the direct synthesis of unconventional phases and modulation of phase transformation in diverse kinds of nanomaterials. We cover the synthesis of nanomaterials ranging from metal nanostructures such as Au, Ag, Cu, Pd, and Ru, and their alloys; metal oxides, borides, and carbides; to transition metal dichalcogenides (TMDs) and 2D layered materials. We review synthesis and growth methods ranging from wet-chemical reduction and seed-mediated epitaxial growth to chemical vapor deposition (CVD), high pressure phase transformation, and electron and ion-beam irradiation. After that, we summarize the significant influence of phase on the various properties of unconventional-phase nanomaterials. We also discuss the potential applications of the developed unconventional-phase nanomaterials in different areas including catalysis, electrochemical energy storage (batteries and supercapacitors), solar cells, optoelectronics, and sensing. Finally, we discuss existing challenges and future research directions in PEN.

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Ni-mediated reactions in nanocrystalline diamond on Si substrates: the role of the oxide barrier

Abstract: Nanocrystalline diamond films grown on Si/native oxide substrates were subjected to Ni-mediated graphitization. Transmission electron microscopy study revealed crystals of NiSi2 and SiC across the carbon/silicon interface in addition.

Cited by 7 publications

References 34 publications

Effects of metal layers on chemical vapor deposition of diamond films

Effects of metal layers on chemical vapor deposition of diamond films

Rational design of diamond through microstructure engineering: From synthesis to applications

Recent Progress on Phase Engineering of Nanomaterials

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