Next Generation Of BAW: The New Benchmark for RF Acoustic Technologies

Tag, Andreas; Schaefer, Michael; Sadhu, Jyothi; Tajic, Alireza; Stokes, Paul; Koohi, Milad Zolfagharloo; Yusuf, Waleed; Heeren, Wolfgang; Fatemi, Hedy; Celii, F. G.; Trujillo, Jaime; Cho, Chanseob; He, Yanghua; Silbar, Eliot; Fuentes, Erika; Berer, Thomas; Al-Joumayly, Mudar A.; Rothemund, Ralph

doi:10.1109/ius54386.2022.9958625

Cited by 11 publications

(8 citation statements)

References 5 publications

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“…However, since then the frequency supported by BAW technologies continued to increase in the same manner as new bands were introduced for LTE and 5G. Nowadays, BAW technology has been commercialized for the frequency range from 1 GHz to above 8 GHz [15]. Fig.…”

Section: B Bulk Acoustic Wave Devicesmentioning

confidence: 99%

From Microwave Acoustic Filters to Millimeter-Wave Operation and New Applications

et al. 2023

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This paper reviews the latest developments in microwave acoustic wave devices. After an introduction and brief history of bulk acoustic wave (BAW) and surface acoustic wave (SAW) devices, a review is given for guided SAWs and XBARs -two new technologies, which are promising for future 5G applications. Following this, we discuss recent simulation techniques, such as 3D finite element method (3D FEM) and simulation of nonlinearities, as well as filter synthesis. Next, a review on tunable and reconfigurable acoustics is given. Finally, we present the latest developments in microwave acoustics for millimeter-wave (mm-wave) operation as well as BAW oscillators.INDEX TERMS Bulk acoustic wave (BAW) devices, filter, filter-synthesis, front-end, high power, MTT 70th Anniversary Special Issue, multiplexer, nonlinearity, resonator, surface acoustic wave (SAW) devices.

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Section: B Bulk Acoustic Wave Devicesmentioning

confidence: 99%

From Microwave Acoustic Filters to Millimeter-Wave Operation and New Applications

et al. 2023

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“…The AlN-based BAW devices have been demonstrated to scale the frequency up to 8 GHz [10], due to the thicknessdefined frequency. However, the relative BW is limited by the moderate piezoelectric constant e 33 of AlN [11].…”

Section: Introductionmentioning

confidence: 99%

Near 5-GHz Longitudinal Leaky Surface Acoustic Wave Devices on LiNbO₃/SiC Substrates

Zheng,

Zhang,

et al. 2024

IEEE Trans. Microwave Theory Techn.

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This work demonstrates a group of longitudinal leaky surface acoustic wave (LL-SAW) resonators and filters using thin-film X-cut lithium niobate on silicon carbide (LiNbO 3 /SiC). An improved design that exploits a nonstandard reflector (NSR) structure to suppress the lateral overtone spurious mode in the LL-SAW response is demonstrated. The fabricated resonators show scalable resonant frequencies from 3.75 to 4.95 GHz, admittance ratios (ARs) between 56.0 and 64.1 dB, and large k 2 t between 18.3% and 20%. The fabricated filter with a center frequency of 4.84 GHz shows a minimum insertion loss (IL) of 0.88 dB, an out-of-band rejection of 26 dB, and a 3-dB bandwidth (BW) of 457 MHz, partially covering the fifth-generation (5G) N79 band. The filter design tradeoff between SH mode suppression and BW is also demonstrated. The results herein show the great potential of LL-SAW technologies using LiNbO 3 /SiC substrate for commercial applications in 5G new radio (NR) and Wi-Fi 5/6 bands.

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“…Now, RF bulk acoustic wave (BAW) resonators employing AlN thin films [1][2][3][4][5][6] are widely used and indispensable in the RF frontend of mobile communication terminals. [7][8][9] RF BAW resonators employ acoustic resonance of piezoelectric thin membranes, and they should be isolated acoustically from surroundings necessary for their physical support. This isolation is realized by two methods.…”

Section: Introductionmentioning

confidence: 99%

“…12) SMR-type BAW resonators possess several advantages such as good power durability and structural robustness compared with FBAR. 8) However, they also have some demerits. One is the reduction of the effective electromechanical coupling factor k eff 2 due to penetration of acoustic waves into the Bragg reflector.…”

Section: Introductionmentioning

confidence: 99%

Use of periodic 2D pillar array for performance enhancement of AlN-based SMR BAW resonators

Luo,

Wu,

Yang

et al. 2024

Jpn. J. Appl. Phys.

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This paper discusses the applicability of a two-dimensional (2D) periodic pillar array as the first layer of acoustic mirror for AlN-based solidly mounted resonators (SMR) of bulk acoustic waves (BAW). It is based on the idea that the periodic pillar array behaves like a uniform layer when the period is much smaller than the wavelength and its behavior is given by the ensemble average of pillar materials. The simulation shows that the effective electromechanical coupling factor can be enhanced close to that of AlN-based film bulk acoustic resonators (FBAR) when the slot ratio is large. It is also shown that the use of 2D pillar array can enhance reflectivity of the Bragg reflector. It should be noted that the periodic 2D pillar array can also control anisotropy of wave propagation along the surface. Owing to this, transverse mode resonances can be suppressed well by adjusting the wave dispersion curve properly.

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Next Generation Of BAW: The New Benchmark for RF Acoustic Technologies

Cited by 11 publications

References 5 publications

From Microwave Acoustic Filters to Millimeter-Wave Operation and New Applications

From Microwave Acoustic Filters to Millimeter-Wave Operation and New Applications

Near 5-GHz Longitudinal Leaky Surface Acoustic Wave Devices on LiNbO₃/SiC Substrates

Use of periodic 2D pillar array for performance enhancement of AlN-based SMR BAW resonators

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Next Generation Of BAW: The New Benchmark for RF Acoustic Technologies

Cited by 11 publications

References 5 publications

From Microwave Acoustic Filters to Millimeter-Wave Operation and New Applications

From Microwave Acoustic Filters to Millimeter-Wave Operation and New Applications

Near 5-GHz Longitudinal Leaky Surface Acoustic Wave Devices on LiNbO3/SiC Substrates

Use of periodic 2D pillar array for performance enhancement of AlN-based SMR BAW resonators

Contact Info

Product

Resources

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Near 5-GHz Longitudinal Leaky Surface Acoustic Wave Devices on LiNbO₃/SiC Substrates