Next generation ferroelectric materials for semiconductor process integration and their applications

Abstract

Ferroelectrics are a class of materials that possess a variety of interactions between electrical, mechanical, and thermal properties that have enabled a wealth of functionalities. To realize integrated systems, the integration of these functionalities into semiconductor processes is necessary. To this end, the complexity of well-known ferroelectric materials, e.g., the perovskite class, causes severe issues that limit its applications in integrated systems. The discovery of ferroelectricity in hafnium oxide-based materials brought a renewed interest into this field during the last decade. Very recently, ferroelectricity was also verified in aluminum scandium nitride extending the potential of seeing a wealth of ferroelectric functions in integrated electronics in the future. This paper discusses the prospects of both material systems in various applications.

Interfacial ferroelectricity in marginally twisted 2D semiconductors

“…Ferroelectrics are crystals that feature intrinsic charge polarisation with two or more preferred stable directions of the polarisation vector, determined by the lattice symmetry. Switching between those stable polarisation states can be controlled by application of an external electric field; allowing various applications including non-volatile memory, microwave devices, transistors, and sensors 1,2 . Of particular interest are ferroelectric semiconductors that would potentially allow field-effect transistors with additional functionality, e.g.…”

Phase Transition Effect on Ferroelectric Domain Surface Charge Dynamics in BaTiO3 Single Crystal

“…The development of ferroelectric materials has promoted promising applications in non-volatile storage devices [ 1 , 2 , 3 ], sensors and actuators [ 4 , 5 ], and infrared detector systems [ 6 , 7 ]. The ferroelectric domain structure is the fundamental execution unit of ferroelectrics [ 8 ].…”

Interplay between oxygen defects and dopants: effect on structure and performance of HfO2-based ferroelectrics

“…Details about these devices can be found in other review articles. 107,108 FTJs are built in an identical fashion as ferroelectric capacitors consisting of an ultrathin ferroelectric layer sandwiched by two different electrodes (MFM or with semiconductors electrodes, SFS). Other authors use a double-layer stack with an additional dielectric layer which serves as tunnelling barrier for electron conduction due to the improved device performance which leads to a MFIM structure as discussed in more detail in section 3.3.2.…”