Next generation adduct purification techniques for low oxygen content metal alkyls

Coward, K.M.; Jones, Anthony; Pemble, Martyn E.; Rushworth, S.; Smith, Lesley M.; Martin, Trevor

doi:10.1007/s11664-000-0111-7

Cited by 7 publications

(4 citation statements)

References 15 publications

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“…[4], who went further in their attempt to study multidentate nitrogen donor ligands (4N-and 6N-aza crowns), which were used to purify the GaEt 3 (R ¼ Et, Pr) compounds. They have developed a new advanced technique aimed at ultimate minimization of oxygen impurities.…”

Section: Resultsmentioning

confidence: 99%

“…They have developed a new advanced technique aimed at ultimate minimization of oxygen impurities. It should be also noted that the distilled complex with triethylamine contains aggregate metal impurities at the level of <1 ppm [4].…”

Section: Resultsmentioning

confidence: 99%

“…This involves the formation of an involatile Group 13-Lewis base adduct from which volatile non-adducting, or weakly adducting impurities (e.g. R 4 Sn, R 4 Si, R 2 Zn) can be removed by vacuum distillation. The adduct is then thermally dissociated at moderate temperatures to liberate the purified Group 13 trialkyl.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The synthesis and deep purification of GaEt3. Reversible complexation of adducts MAlk3 (M = Al, Ga, In; Alk = Me, Et) with phenylphosphines

Shatunov

Korlyukov

Lebedev

et al. 2011

Journal of Organometallic Chemistry

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

The synthesis and deep purification of GaEt3. Reversible complexation of adducts MAlk3 (M = Al, Ga, In; Alk = Me, Et) with phenylphosphines

Shatunov

Korlyukov

Lebedev

et al. 2011

Journal of Organometallic Chemistry

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“…"Adduct-purified" organometallics have allowed for extreme levels of purity to be achieved, including the removal of alkoxide-based impurities, which often lead to oxygen incorporation into the growing semiconductor [117][118][119][120]. The adduct formation in the liquid phase between the MOVPE trialkyls and selected Lewis base solvents can be made extremely selective resulting in a solid adduct compound which can be removed from the solution.…”

Section: Reactions Between Precursorsmentioning

confidence: 99%

Metal Organic Vapor Phase Epitaxy Chemical Kinetics

Kuech

2015

Handbook of Crystal Growth

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Impurities in hydride gases part 2: Investigation of trace CO2 in the liquid and vapor phases of ultra-pure ammonia

Funke¹,

Welchhans²,

Watanabe³

et al. 2004

Journal of Elec Materi

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Ammonia (NH 3 ) as a precursor for epitaxial nitride films is required to be free of trace oxygenated impurities, such as CO 2 , that have been shown to negatively affect growth processes and device performance. Carbon dioxide can react reversibly with the NH 3 gas to form ammonium carbamate, NH 4 COONH 2 (a solid with low solubility in liquid NH 3 ) and, therefore, can be present in cylinder sources both in the free and chemically bound form. A gas chromatograph (GC)-based method has been developed to accurately quantify the total CO 2 content in both vapor-and liquid-phase NH 3 streams. A heated GC-sampling manifold is used to thermally decompose any NH 4 COONH 2 present in the sample or calibration standard so that all CO 2 is analyzed in its free form. Several commercial cylinder sources maintained at room temperature were analyzed by this method, and in all cases, equilibrium concentrations of Ͻ75 parts-per-billion by volume (ppbv) CO 2 were present in the gas phase as long as residual liquid was present. Slightly higher concentrations were found in the liquid phase, and upon exhaustion of the liquid phase and heating, CO 2 levels strongly increased to parts-per-million by volume (ppmv) levels. The excess CO 2 is likely adsorbed on the cylinder walls or dispersed in the liquid as solid NH 4 COONH 2 . These results are consistent with thermodynamic calculations based on equilibrium data for the carbamate system available in the literature. To meet the purity requirements of organo-metallic vapor-phase epitaxy processes, the performance of an adsorbent-based purifier that is capable of removing residual CO 2 in both free and chemically bound forms from NH 3 streams is discussed.

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Next generation adduct purification techniques for low oxygen content metal alkyls

Cited by 7 publications

References 15 publications

The synthesis and deep purification of GaEt3. Reversible complexation of adducts MAlk3 (M = Al, Ga, In; Alk = Me, Et) with phenylphosphines

The synthesis and deep purification of GaEt3. Reversible complexation of adducts MAlk3 (M = Al, Ga, In; Alk = Me, Et) with phenylphosphines

Metal Organic Vapor Phase Epitaxy Chemical Kinetics

Impurities in hydride gases part 2: Investigation of trace CO2 in the liquid and vapor phases of ultra-pure ammonia

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