NEXAFS spectra of an epitaxial boron nitride film on Ni(1 1 1)

Shimoyama, Iwao; Baba, Yuji; Sekiguchi, Takuya; Nath, Krishna G.

doi:10.1016/j.elspec.2004.02.040

Cited by 28 publications

(26 citation statements)

References 19 publications

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“…As can be seen in the figure, the deuterium treatment caused clear changes in the shape of the B K-edge spectrum, in contrast to the N K-edge spectrum which shows only a slight spectral change. These solid curves of B and N K-edge NEXAFS spectra are consistent with the reported spectra for h-BN on Ni(111) by Shimoyama et al 44,45 According to the interpretation by Shimoyama et al, 44 the sharp peaks in the B K-edge are assigned to B 1s → π * resonances, and the broad features are assigned to B 1s → σ * resonances. The second π * peak, denoted as π * B in the top of Fig.…”

Section: B Tofsupporting

confidence: 90%

Selective adsorption of atomic hydrogen on a h-BN thin film

Koswattage

Shimoyama

Baba

et al. 2011

The Journal of Chemical Physics

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The adsorption of atomic hydrogen on hexagonal boron nitride (h-BN) is studied using two element-specific spectroscopies, i.e., near-edge x-ray absorption fine structure (NEXAFS) spectroscopy and x-ray photoelectron spectroscopy (XPS). B K-edge NEXAFS spectra show a clear change in the energy region of the π* band before and after reaction with atomic deuterium. On the other hand, N K-edge NEXAFS spectra show only a little change. B 1s XPS spectra show a distinct component at the low binding energy side of a main component, while N 1s XPS spectra show peak broadening at the high binding energy side. These experimental results are analyzed by the discrete variational Xα method with a core-hole effect and are explained by a model in which hydrogen atoms are preferentially adsorbed on the B sites of h-BN. Based on the experimental and theoretical results, we propose a site-selective property of BN material on adsorption of atomic hydrogen.

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Section: B Tofsupporting

confidence: 90%

Selective adsorption of atomic hydrogen on a h-BN thin film

Koswattage

Shimoyama

Baba

et al. 2011

The Journal of Chemical Physics

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“…It can be used as support for film such as Cu thin film [3], epitaxial boron nitride film [4], crystalline Au layers [5], and palladium ultra-thin film [6]. The most part of the time the starting support for growing films is the Ni(1 1 1) plane, because of its significant energetically stability.…”

Section: Introductionmentioning

confidence: 99%

Uranyl interaction with the hydrated (111) nickel face: A periodic density functional theory investigation

Levesque¹,

Roques²,

Domain³

et al. 2008

Surface Science

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“…Broad p* excitonic states were also observed in the same energy region as X-Z by Shimoyama et al in epitaxial boron nitride films on Ni(111), and attributed in this case to the interaction with the Ni substrate. 37,38 Recently, a wider p* excitonic distribution (189-195 eV) with resolved X-Z peaks was detected after lowenergy Ar þ or N 2 þ ion-bombardment of h-BN crystalline powder attached to a carbon tape. [39][40][41] The X-Z peaks were assigned to a gradual increment of N-vacancies around the B atoms.…”

Section: Introductionmentioning

confidence: 99%

Point defects in hexagonal BN, BC3 and BCxN compounds studied by x-ray absorption near-edge structure

Caretti

Jiménez

2011

Journal of Applied Physics

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The generation of point defects in highly oriented pyrolytic boron nitride (HOPBN) after Ar þ ion bombardment in ultrahigh vacuum and subsequent exposure to air was studied by angle-resolved x-ray absorption near edge structure (XANES). The pristine HOPBN showed well-oriented boron nitride (BN) basal planes parallel to the surface, with a negligible amount of defects. Amorphization of the BN structure took place after Ar þ sputtering, as indicated by the broadening of the XANES spectra and significant decrease of the characteristic p* states. Following air exposure, the XANES analysis revealed a spontaneous reorganization of the sample structure. The appearance of four new B1s p* excitonic peaks indicates an oxygen decoration process of the nitrogen vacancies created by ion bombardment. A core-level shift model is presented to support this statement. This model is successfully extended to the case of oxygen substitutional defects in hexagonal BC 3 and BC x N (0 < x < 4) materials, which can be applied to any B-based sp 2 -bonded honeycomb structure.

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NEXAFS spectra of an epitaxial boron nitride film on Ni(1 1 1)

Cited by 28 publications

References 19 publications

Selective adsorption of atomic hydrogen on a h-BN thin film

Selective adsorption of atomic hydrogen on a h-BN thin film

Uranyl interaction with the hydrated (111) nickel face: A periodic density functional theory investigation

Point defects in hexagonal BN, BC3 and BCxN compounds studied by x-ray absorption near-edge structure

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