2015
DOI: 10.1021/acsami.5b02971
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Newly Observed Temperature and Surface Ligand Dependence of Electron Mobility in Indium Oxide Nanocrystals Solids

Abstract: We developed a new class of organic surface ligands; 2-aminopyridine (2AP), 4-aminobenzoic acid (4ABA), and benzoic acid (BA); for use in the solution ligand exchange of nanocrystals (NCs) in the presence of nitric acid (HNO3). Here, colloidal NCs synthesis is used for the first time. These short, air-stable, easy-to-model ligands bind to the surface of the indium oxide nanocrystal (In2O3 NC) and provide the electrostatic stabilization of NC semiconductor dispersions in N,N-dimethylformamide, allowing for a so… Show more

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Cited by 14 publications
(18 citation statements)
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“…Also, the electronic properties of PbS QDs can be easily modified by surface ligand chemistry . For example, efficient charge transport between QDs and high carrier mobility can be achieved by replacing the long insulating aliphatic ligands with short ones to enhance electronic coupling between QDs . Furthermore, the ligand treatment can also tune the energy levels of PbS QDs by forming different dipole moments at the QD–ligand interface .…”
mentioning
confidence: 99%
“…Also, the electronic properties of PbS QDs can be easily modified by surface ligand chemistry . For example, efficient charge transport between QDs and high carrier mobility can be achieved by replacing the long insulating aliphatic ligands with short ones to enhance electronic coupling between QDs . Furthermore, the ligand treatment can also tune the energy levels of PbS QDs by forming different dipole moments at the QD–ligand interface .…”
mentioning
confidence: 99%
“…where μ is the mobility, μ 00 is the temperature independent pre‐exponential factor, T is the temperature, E a is the activation energy, and k B is the Boltzmann constant Furthermore, E a can be derived from the slope of Arrhenius plot and is 32, 31, and 25 meV for In 2 O 3 ‐BF 4 − NCs thin film annealed at 150, 250, and 350 °C, respectively. The E a decreases with increasing annealing temperature, because of smaller barrier between the nearest neighbor NCs in In 2 O 3 ‐BF 4 − NCs thin film with increasing annealing temperature …”
Section: Resultsmentioning
confidence: 99%
“…At a low annealing temperature of 350 C, In 2 O 3 -BF 4 − thin film exhibited a mobility of 13.0 cm 2 /V/s, which is higher than previously reported for In 2 O 3 NC TFT. 21,28 To deeply understand In 2 O 3 -BF 4 − thin film, mechanism of electron transport on In 2 O 3 -BF 4 − NCs thin films was investigated by measuring the TFT properties at different temperatures from 223 to 323 K in a vacuum chamber.…”
Section: Resultsmentioning
confidence: 99%
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